2SJ317
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
12
V
Gate to source voltage
V
GSS
7
V
Drain current
I
D
2
A
Drain peak current
I
D(pulse)
*
1
4
A
Body to drain diode reverse drain current
I
DR
2
A
Channel dissipation
Pch*
2
1
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
100
s, duty cycle
10%
2. Value on the alumina ceramic board (12.5
20
0.7 mm).
3. Marking is "NY".
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
12
--
--
V
I
D
= 1 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
7
--
--
V
I
G
=
10
A, V
DS
= 0
Gate to source cutoff current
I
GSS
--
--
5
A
V
GS
=
6.5 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
1
A
V
DS
= 8 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
I
D
= 100
A, V
DS
= 5 V
Static drain to source on state
R
DS(on)1
--
0.4
0.7
I
D
= 0.5 A*
1
, V
GS
= 2.2 V
resistance
R
DS(on)2
--
0.28
0.35
I
D
= 1 A*
1
, V
GS
= 4 V
Forward transfer admittance
|y
fs
|
1.0
2.3
--
S
I
D
= 1 A*
1
, V
DS
= 5 V
Input capacitance
Ciss
--
63
--
pF
V
DS
= 5 V, V
GS
= 0,
Output capacitance
Coss
--
180
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
23
--
pF
Turn-on time
t
on
--
500
--
ns
I
D
= 0.2 A*
1
, Vin = 4 V,
Turn-off time
t
off
--
2860
--
ns
R
L
= 51
Note:
1. Pulse test
2SJ317
3
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (C)
Channel Power Dissipation Pch (W)
(on the aluminam ceramic board)
Maximun Power Dissipation Curve
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
1.0
3
10
30
100
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Operation in this Area
is limited by R
DS(on)
DC Operation
(Tc=25C)
PW = 1 ms
1 shot
Ta = 25C
Maximun Safe Operation Area
5
4
3
2
1
0
2
4
6
8
10
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
V = 1 V
2.5
2
1.5
GS
Pulse test
3
4
5
Typical Output Characteristics
5
4
3
2
1
0
1
2
3
4
5
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = 5 V
Pulse test
DS
Ta = 25C
25C
75C
Typical Forward Transfer Characteristics
2SJ317
4
20
10
5
2
1
0.5
0.2
0.1 0.2
0.5 1.0
2
5
10
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
V = 5 V
Pulse test
DS
Ta = 25C
75C
25C
Forward Transfer Admittance vs.
Drain Current
10
5
2
1
0.5
0.2
0.1
0.1 0.2
0.5 1.0
2
5
10
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Pulse test
V = 2 V
GS
3 V
4 V
Drain to Source on State Resistance
vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage
DS(on)
I = 1 A
D
Pulse test
0.5 A
0.2 A
0.1 A
V (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
0.8
0.6
0.4
0.2
25
0
25
50
75
100
Case Temperature Tc (C)
Drain to Source on State Resistance
DS(on)
V = 4 V
GS
Pulse test
0.5 A
1 A
I = 2 A
R ( )
0
V = 2.5 V
GS
D
1 A, 0.5A
I = 2 A
D
Drain to Source on State Resintance
vs. Case Temperature
2SJ317
5
2000
1000
500
200
100
50
20
0.1 0.2
0.5 1.0
2
5
10
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
di/dt = 10 A/s
V = 0
Reverse Recovery Time vs.
Reverse Drain Current
GS
2000
1000
500
200
100
50
0.05 0.1 0.2
0.5
1
2
5
Drain Current I (A)
D
Switching Time t (ns)
td(on)
td(off)
tr
tf
Switching Time vs. Drain Current
V = 4 V
V = 10 V
PW = 5 s
Duty cycle 1 %
.
.
<
=
GS
DD
25
20
15
10
5
2
4
6
8
10
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
V
DS
V = 10 V
I = 2 A
Pulse test
0
V
GS
DD
D
10
8
6
4
2
0
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
1000
500
200
100
50
20
10
0.1 0.2
0.5 1.0
2
5
10
Drain to Source Voltage V (V)
DS
Typical Capacitance C (pF)
V = 0
f = 1 MHz
Coss
Ciss
GS
Crss
Typical Capacitance vs.
Drain to Source Voltage
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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