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Электронный компонент: 2SJ351

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2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143
1st. Edition
Application
Low frequency power amplifier
Complementary pair with 2SK2220, 2SK2221
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Ordering Information
Type No.
V
DSX
2SJ351
180 V
2SJ352
200 V
2SJ351, 2SJ352
2
Outline
D
G
S
1
2
3
TO-3P
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SJ351
V
DSX
180
V
2SJ352
200
Gate to source voltage
V
GSS
20
V
Drain current
I
D
8
A
Body to drain diode reverse drain current
I
DR
8
A
Channel dissipation
Pch*
1
100
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
2SJ351, 2SJ352
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SJ351
V
(BR)DSX
180
--
--
V
I
D
= 10 mA, V
GS
= 10 V
breakdown voltage
2SJ352
200
--
--
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
0.15
--
1.45
V
I
D
= 100 mA, V
DS
= 10 V
Drain to source saturation
voltage
V
DS(sat)
--
--
12
V
I
D
= 8 A, V
GD
= 0*
1
Forward transfer admittance
|y
fs
|
0.7
1.0
1.4
S
I
D
= 3 A, V
DS
= 10 V*
1
Input capacitance
Ciss
--
800
--
pF
V
GS
= 5 V, V
DS
= 10 V,
Output capacitance
Coss
--
1000
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
18
--
pF
Turn-on time
t
on
--
320
--
ns
V
DD
= 30 V, I
D
= 4 A
Turn-off time
t
off
--
120
--
ns
Note:
1. Pulse test
2SJ351, 2SJ352
4
150
100
50
Channel Dissipation Pch (W)
50
100
150
Case Temperature Tc (C)
0
Power vs. Temperature Derating
0.2
5
10
20
50
100 200
500
0.5
1.0
2
5
10
20
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Ta = 25C
I
D
max (Continuous)
PW = 10 ms 1 Shot
PW = 100 ms 1 Shot
PW = 1 s 1 Shot
DC Operation (T
C = 25C)
2SJ351
2SJ352
10
20
30
40
50
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
T
C
= 25C
0
1
2
3
4
5
6
7
8
9
Pch = 125 W
V
GS
= 10 V
0
2
4
6
8
10
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
T
C
= 25C
0
1
V
GS
= 10 V
2
3
4
5
6
7
9
8
2SJ351, 2SJ352
5
2
4
6
8
10
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
0
V
DS
= 10 V
T
C
= 25C
25
75
0.4
0.8
1.2
1.6
2.0
0.2
0.4
0.6
0.8
1.0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
0
V
DS
= 10 V
T
C
= 25C
25
75
10 k
100 k
1
M
1 m
10 m
100 m
1.0
5
Frequency f (Hz)
Forward Transfer Admittance
yfs
(S)
2 k
T
C
= 25C
V
DS
= 10 V
I
D
= 2 A
Forward Transfer Admittance vs. Frequency
10 M
20 M
0.5 m
0.2
0.5
1.0
2
5
10
50
100
200
500
Drain Current I
D
(A)
Switching Time ton, toff (ns)
Switching Time vs. Drain Current
0.1
ton
5
10
20
toff
2SJ351, 2SJ352
6
Output
R
L
Input
50
V
DD
=
30V
.
.
PW = 50
s
duty ratio
= 1%
Switching Time Test Circuit
Input
Output
90%
10%
10%
90%
ton
toff
Waveforms
3.2
0.2
4.8
0.2
1.5
0.3
2.8
0.6
0.2
1.0
0.2
18.0
0.5
19.9
0.2
15.6
0.3
0.5
1.0
5.0
0.3
1.6
1.4 Max
2.0
2.0
14.9
0.2
3.6
0.9
1.0
5.45
0.5
5.45
0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
--
Conforms
5.0 g
Unit: mm
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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