2SJ452
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
50
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
0.2
A
Drain peak current
I
D(pulse)
*
1
0.4
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1%
Marking is "ZM".
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
50
--
--
V
I
D
= 100
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
1.0
A
V
DS
= 40 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
2.0
A
V
GS
=
16 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
0.5
--
1.5
V
I
D
= 10
A, V
DS
= 5 V
Static drain to source on state
resistance
R
DS(on)
1
--
5.0
7.0
I
D
= 100 mA
V
GS
= 4 V*
1
Static drain to source on state
resistance
R
DS(on)
2
--
7.5
12.0
I
D
= 40 mA
V
GS
= 2.5 V*
1
Foward transfer admittance
|y
fs
|
0.1
0.19
--
S
I
D
= 100 mA*
1
V
DS
= 10 V
Input capacitance
Ciss
--
1.1
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
15.7
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
0.12
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
0.45
--
s
V
GS
= 10 V, I
D
= 0.1 A
Rise time
t
r
--
1.3
--
s
R
L
= 300
Turn-off delay tiem
t
d(off)
--
8.4
--
s
Fall time
t
f
--
5.6
--
s
Note:
1. Pulse Test
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
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