2SJ471
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
--
25
35
m
I
D
= 15A, V
GS
= 10V
Note3
resistance
R
DS(on)
--
40
60
m
I
D
= 15A, V
GS
= 4V
Note3
Forward transfer admittance
|y
fs
|
12
20
--
S
I
D
= 15A, V
DS
= 10V
Note3
Input capacitance
Ciss
--
1700
--
pF
V
DS
= 10V
Output capacitance
Coss
--
950
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
260
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
20
--
ns
V
GS
= 10V, I
D
= 15A
Rise time
t
r
--
290
--
ns
R
L
= 0.67
Turn-off delay time
t
d(off)
--
170
--
ns
Fall time
t
f
--
130
--
ns
Body to drain diode forward
voltage
V
DF
--
1.1
--
V
I
F
= 30A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
70
--
ns
I
F
= 30A, V
GS
= 0
diF/ dt = 50A/
s
Note:
3. Pulse test
2SJ471
5
1.0
0.8
0.6
0.4
0.2
0
4
8
12
16
20
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
0.5
0.2
0.1
0.02
0.01
0.05
1
2
5
10
20
50
Drain Current I (A)
D
Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Drain Current
0.10
0.08
0.06
0.04
0.02
40
0
40
80
120
160
0
Cate Temperature Tc (
C)
Static Drain to Source on State Resistance
vs. Temperature
0.1
50
50
0.1
Foward Transfer Admittance vs.
Drain Current
Foward Transfer Admittance |yfs| (S)
I = 20 A
D
10 A
5 A
V = 4 V
GS
10 V
V = 4 V
GS
I = 20 A
D
5, 10, 20 A
5, 10 A
10 V
20
10
2
5
1
0.2
0.5
0.2 0.5 1 2
5 10 20
25
C
Tc = 25
C
75
C
V = 10 V
Pulse Test
DS
DS(on)
Drain to Source Saturation Voltage
V (V)
Pulse Test
DS(on)
R ( )
Drain to Source on State Resistance
DS(on)
R ( )
Pulse Test
Drain Current I (A)
D
2SJ471
6
1000
200
500
100
20
5
50
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0
4
8
12
16
20
10000
5000
2000
500
200
1000
100
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
0
10
20
30
40
0
0
4
8
12
16
20
50
16
32
48
64
80
V
GS
V
DS
V = 5 V
10 V
25 V
DD
DD
V = 25 V
10 V
5 V
I = 30 A
D
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.1
50
0.2 0.5 1 2
5 10 20
10
1000
200
500
100
20
5
50
0.1
50
0.2 0.5 1 2
5 10 20
10
di / dt = 50 A /
s
V = 0, Ta = 25
C
GS
t f
r
t
d(on)
t
d(off)
t
V = 10 V, V = 10 V
duty < 1 %
GS
DD
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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