2SJ505(L), 2SJ505(S)
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
10
A
V
DS
= 60 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
--
0.017
0.022
I
D
= 25A, V
GS
= 10V*
1
resistance
R
DS(on)
--
0.024
0.036
I
D
= 25A, V
GS
= 4V*
1
Forward transfer admittance
|y
fs
|
27
39
--
S
I
D
= 25A, V
DS
= 10V*
1
Input capacitance
Ciss
--
4100
--
pF
V
DS
= 10V
Output capacitance
Coss
--
2100
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
450
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
32
--
ns
V
GS
= 10V, I
D
= 10A
Rise time
t
r
--
225
--
ns
R
L
= 3
Turn-off delay time
t
d(off)
--
530
--
ns
Fall time
t
f
--
330
--
ns
Body to drain diode forward
voltage
V
DF
--
1.1
--
V
I
F
= 50A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
110
--
ns
I
F
= 50A, V
GS
= 0
diF/ dt = 50A/
s
Note:
1. Pulse test
2SJ505(L), 2SJ505(S)
6
1000
500
200
50
100
20
10
0.1 0.3
3
0
10
20
30
40
50
2000
1000
500
0
20
40
60
80
0
0
4
8
12
16
20
100
40
80
120
160
200
1000
200
500
100
20
50
10
0.1 0.3
1
3
10
1
30
200
100
DS
V
GS
V
V = 50 V
25 V
10 V
DD
100
V = 50 V
25 V
10 V
DD
5000
30
100
r
t
d(off)
t
t f
d(on)
t
10
di / dt = 50 A /
s
V = 0, Ta = 25
C
GS
V = 10 V, V = 30 V
PW = 10
s, duty < 1 %
GS
DD
=
I = 50 A
D
10000
20000
50000
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Switching Time t (ns)
Switching Characteristics
Drain Current I (A)
D
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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