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Электронный компонент: 2SJ506

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2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
Low on-resistance
R
DS(on)
= 0.065
typ. (at V
GS
= 10V, I
D
= 5A)
Low drive current
High speed switching
4V gate drive devices.
Outline
1 2
3
4
4
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK2
D
G
S
2SJ506(L), 2SJ506(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)
Note1
40
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
2SJ506(L), 2SJ506(S)
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
--
65
85
m
I
D
= 5A, V
GS
= 10V
Note3
resistance
R
DS(on)
--
110
180
m
I
D
= 5A, V
GS
= 4V
Note3
Forward transfer admittance
|y
fs
|
10
16
--
S
I
D
= 5A, V
DS
= 10V
Note3
Input capacitance
Ciss
--
660
--
pF
V
DS
= 10V
Output capacitance
Coss
--
440
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
140
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
12
--
ns
I
D
= 5A, R
L
= 2
Rise time
t
r
--
65
--
ns
V
GS
= 10V
Turn-off delay time
t
d(off)
--
85
--
ns
Fall time
t
f
--
65
--
ns
Body to drain diode forward
voltage
V
DF
--
1.05
--
V
I
F
= 10A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
65
--
ns
I
F
= 10A, V
GS
= 0
diF/ dt = 50A/
s
Note:
3. Pulse test
2SJ506(L), 2SJ506(S)
4
Main Characteristics
40
30
20
10
0
50
100
150
200
20
16
12
8
4
0
4
8
12
16
20
4 V
0
1
2
3
4
5
3 V
20
16
12
8
4
3.5 V
DS
V = 10 V
Pulse Test
10 V
Tc = 25
C
Pulse Test
V = 2.5 V
GS
75
C
5 V
4.5 V
25
C
6 V
8 V
500
200
100
20
0.1
10
2
10
0.1 0.2
0.5 1
2
5
50
5
1
0.2
0.5
20
50
Ta = 25
C
1 ms
PW = 10 ms (1shot)
10
s
100
s
DC Operation
(Tc = 25
C)
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
Drain Current I (A)
D
Typical Output Characteristics
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Typical Transfer Characteristics
Drain Current I (A)
D
2SJ506(L), 2SJ506(S)
5
2
1.6
1.2
0.8
0.4
0
4
8
12
16
20
200
160
120
80
40
40
0
40
80
120
160
0
2,5 A
Pulse Test
Pulse Test
I = 10 A
D
GS
V = 10 V
10 A
GS
V = 4 V
2 A
100
10
0.5
2
1
5
20
I = 10 A
D
2 A
5 A
50
0.1
50
0.2 0.5 1 2
5 10 20
25
C
75
C
V = 10 V
DS
Pulse Test
Tc = 25
C
1
2
5
10
20
50 100
1000
500
50
20
10
200
100
Pulse Test
10 V
V = 4 V
GS
5 A
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Gate to Source Voltage V (V)
GS
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Temperature
Case Temperature Tc (
C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
2SJ506(L), 2SJ506(S)
6
100
50
20
10
0.1 0.2
1
0
10
20
30
40
50
200
100
50
1000
200
500
100
10
20
5
0.1 0.2
1 2
5
0.5
5
20
10
10
500
20
50
2
=
1000
2000
5000
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
20
0
10
20
30
40
0
0
4
8
12
16
20
50
8
16
24
32
40
DS
V
GS
V
V = 25 V
10 V
5 V
DD
V = 5 V
10 V
25 V
DD
I = 10 A
D
50
0.5
10
r
t
d(off)
t
t f
d(on)
t
V = 10 V, V = 10 V
PW = 10
s, duty < 1 %
GS
DD
di / dt = 50 A /
s
V = 0, Ta = 25
C
GS
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Switching Time t (ns)
Switching Characteristics
Drain Current I (A)
D
2SJ506(L), 2SJ506(S)
7
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
10 V
5 V
Pulse Test
V = 0.5 V
GS
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 6.25
C/W, Tc = 25
C

D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25
C
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Normalized Transient Thermal Impedance
s (t)
2SJ506(L), 2SJ506(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit
Waveforms
2SJ506(L), 2SJ506(S)
9
Package Dimensions
Unit: mm
6.5
0.5
5.4
0.5
1.15
0.1
2.3
0.2
0.55
0.1
2.29
0.5
0.55
0.1
1.2 typ
1.7
0.5
5.5
0.5
3.1
0.5
16.2
0.5
2.29
0.5
6.5
0.5
5.4
0.5
1.15
0.1
0.8
0.1
2.3
0.5
0.55
0.1
1.7
0.5
5.5
0.5
9.5
0.5
2.5
0.5
2.29
0.5
2.29
0.5
1.2 Max
0.55
0.1
0 ~ 0.25
0.8
0.1
type
L
S type
4.7
0.5
Hitachi
EIAJ ( L type)
EIAJ ( S type)
JEDEC
DPAK2
SC63
SC64
--
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