2SJ535
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-627B (Z)
3rd. Edition
Jun 1998
Features
Low on-resistance
R
DS(on)
= 0.028
typ.
Low drive current.
4V gate drive devices.
High speed switching.
Outline
1
2
3
TO220FM
1. Gate
2. Drain
3. Source
D
G
S
2SJ535
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)
Note1
120
A
Body-drain diode reverse drain current I
DR
30
A
Avalanche current
I
AP
Note3
30
A
Avalanche energy
E
AR
Note3
77
mJ
Channel dissipation
Pch
Note2
35
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
3. Value at Tch = 25
C, Rg
50
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 60 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
R
DS(on)
--
0.028
0.037
I
D
= 15A, V
GS
= 10V
Note4
resistance
R
DS(on)
--
0.038
0.055
I
D
= 15A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
15
25
--
S
I
D
= 15A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
2500
--
pF
V
DS
= 10V
Output capacitance
Coss
--
1300
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
300
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
25
--
ns
V
GS
= 10V, I
D
= 15A
Rise time
t
r
--
150
--
ns
R
L
= 2
Turn-off delay time
t
d(off)
--
350
--
ns
Fall time
t
f
--
220
--
ns
Bodydrain diode forward voltage V
DF
--
0.95
--
V
I
F
= 30A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
100
--
ns
I
F
= 30A, V
GS
= 0
diF/ dt =50A/
s
Note:
4. Pulse test
2SJ535
3
Main Characteristics
40
30
20
10
0
50
100
150
200
100
10
1
0.1
0.1
1
10
0
2
4
6
8
10
0
1
2
3
4
5
100
1000
50
40
30
20
10
-25 C
25 C
1 ms
Ta = 25 C
10 s
DS
Pulse Test
V = 10 V
100 s
50
40
30
20
10
2.5 V
2 V
V = 10 V
GS
8 V
5 V
3.5 V
3 V
4 V
Channel Dissipation Pch (W)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Drain Current I (A)
D
Case Temperature Tc (C)
Tc = 75 C
DC Operation (Tc=25
)
Pulse Test
PW = 10 ms (1 shot)
2SJ535
4
5
4
3
2
1
0
4
8
12
16
20
0.1
0.08
0.06
0.04
0.02
40
0
40
80
120
160
0
1
0.5
0.05
0.02
0.01
1
3
10
30
100
300
1000
20 A
0.2
0.1
V = 4 V
GS
10,20A
Pulse Test
Pulse Test
Pulse Test
I = 50 A
D
GS
V = 10 V
50 A
20 A
10 V
10 A
GS
V = 4 V
10 A
0.1
1
10
100
0.3
3
30
100
10
0.1
1
0.3
3
30
25 C
75 C
V = 10 V
DS
Pulse Test
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Tc = 25 C
I = 50 A
D
2SJ535
5
1000
500
200
50
100
20
10
0.1
0.3
3
0
10
20
30
40
50
10000
1000
300
100
0
20
40
60
80
0
0
4
8
12
16
20
100
40
80
120
160
200
1000
200
500
100
20
50
10
0.1 0.3
1
3
10
1
30
30
10
DS
V
GS
V
V = 10 V
25 V
50 V
DD
100
V = 10 V
25 V
50 V
DD
3000
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
30
100
r
t
d(off)
t
t f
d(on)
t
10
di / dt = 50 A / s
V = 0, Ta = 25 C
GS
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS
DD
=
I = 30 A
D
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