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Электронный компонент: 2SK1056

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2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
2
Outline
1
2
3
TO-3P
1. Gate
2. Source
(Flange)
3. Drain
D
G
S
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1056
V
DSX
120
V
2SK1057
140
2SK1058
160
Gate to source voltage
V
GSS
15
V
Drain current
I
D
7
A
Body to drain diode reverse drain current
I
DR
7
A
Channel dissipation
Pch*
1
100
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
2SK1056, 2SK1057, 2SK1058
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1056
V
(BR)DSX
120
--
--
V
I
D
= 10 mA, V
GS
= 10 V
breakdown voltage
2SK1057
140
2SK1058
160
Gate to source breakdown
voltage
V
(BR)GSS
15
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
0.15
--
1.45
V
I
D
= 100 mA, V
DS
= 10 V
Drain to source saturation
voltage
V
DS(sat)
--
--
12
V
I
D
= 7 A, V
GD
= 0 *
1
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
I
D
= 3 A, V
DS
= 10 V *
1
Input capacitance
Ciss
--
600
--
pF
V
GS
= 5 V, V
DS
= 10 V,
Output capacitance
Coss
--
350
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
10
--
pF
Turn-on time
t
on
--
180
--
ns
V
DD
= 20 V, I
D
= 4 A,
Turn-off time
t
off
--
60
--
ns
Note:
1. Pulse test
2SK1056, 2SK1057, 2SK1058
4
50
100
0
Case Temperature T
C
(C)
150
50
Channel Dissipation Pch
(W)
Power vs. Temperature Derating
100
150
Maximum Safe Operation Area
Drain Current I
D
(A)
10
20
50
1.0
2
5
100
10
20
Drain to Source Voltage V
DS
(V)
5
500
0.5
200
0.2
I
D
max
(Continuous)
Ta = 25C
PW = 10 ms 1 shot
PW = 100 ms 1 shot
PW = 1 s 1 shot
DC Operation (T
C
= 25C)
2SK1056
2SK1057
2SK1058
Typical Output Characteristics
30
Drain to Source Voltage V
DS
(V)
40
20
10
50
Drain Current I
D
(A)
0
2
4
6
8
0
10
V
GS
= 10 V
T
C
= 25C
1
2
0
5
6
7
8
9
Pch = 100 W
3
4
Typical Transfer Characteristics
1.2
Gate to Source Voltage V
GS
(V)
1.6
0.8
0.4
0
2.0
0.2
0.4
0.6
0.8
1.0
0
Drain Current I
D
(A)
T
C
= 25C
75
V
DS
= 10 V
25
2SK1056, 2SK1057, 2SK1058
5
Drain to Source Saturation
Voltage vs. Drain Current
1.0
Drain Current I
D
(A)
2
0.5
0.2
5
1.0
2
5
10
0.1
0.5
Drain to Source Saturation Voltage
V
DS
(on)
(V)
0.2
0.1
10
T
C
= 25
C
25
C 75
C
V
GD
= 0
Drain to Source Voltage vs.
Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
4
6
8
10
0
2
Drain to Source Voltage V
DS
(V)
I
D
= 1 A
5A
T
C
= 25C
2A
Input Capacitance vs. Gate
Source Voltage
1000
500
200
100
Input Capacitance Ciss (pF)
0
2
4
10
Gate to Source Voltage V
GS
(V)
6
8
V
DS
= 10 V
f = 1 MHz
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k
30 k 100 k
300 k 1 M
10 M
Frequency f (Hz)
3 M
Forward Transfer Admittance
yfs
(S)
T
C
= 25C
V
DS
= 10 V
I
D
= 2 A
2SK1056, 2SK1057, 2SK1058
6
Switching Time vs. Drain Current
500
200
100
50
20
10
5
0.1
0.2
0.5
1.0
2
10
Drain Current I
D
(A)
5
Switching Time ton,toff (ns)
t
on
t
off
Output
R
L
= 2
20 V
50
Input
PW = 50
s
duty ratio
= 1 %
Switching Time Test Circuit
90 %
10 %
90 %
10 %
Output
Input
t
on
t
off
Waveforms
3.2
0.2
4.8
0.2
1.5
0.3
2.8
0.6
0.2
1.0
0.2
18.0
0.5
19.9
0.2
15.6
0.3
0.5
1.0
5.0
0.3
1.6
1.4 Max
2.0
2.0
14.9
0.2
3.6
0.9
1.0
5.45
0.5
5.45
0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
--
Conforms
5.0 g
Unit: mm
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