2SK1151(L)(S), 2SK1152(L)(S)
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1151 V
(BR)DSS
450
--
--
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
2SK1152
500
Gate to source breakdown
voltage
V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
25 V, V
DS
= 0
Zero gate voltage
2SK1151 I
DSS
--
--
100
A
V
DS
= 360 V, V
GS
= 0
drain current
2SK1152
V
DS
= 400 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
3.0
V
I
D
= 1 mA, V
DS
= 10 V
Static Drain to source 2SK1151 R
DS(on)
--
3.5
5.5
I
D
= 1 A, V
GS
= 10 V *
1
on stateresistance
2SK1152
--
4.0
6.0
Forward transfer admittance
|yfs|
0.6
1.1
--
S
I
D
= 1 A, V
DS
= 20 V *
1
Input capacitance
Ciss
--
160
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
45
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
5
--
pF
Turn-on delay time
t
d(on)
--
5
--
ns
I
D
= 1 A, V
GS
= 10 V,
Rise time
t
r
--
10
--
ns
R
L
= 30
Turn-off delay time
t
d(off)
--
20
--
ns
Fall time
t
f
--
10
--
ns
Body to drain diode forward
voltage
V
DF
--
1.0
--
V
I
F
= 1.5 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
220
--
ns
I
F
= 1.5 A, V
GS
= 0,
di
F
/dt = 100 A/
s
Note:
1. Pulse test
2SK1151(L)(S), 2SK1152(L)(S)
5
20
16
12
8
4
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1 A
I
D
= 0.5 A
Drain to Source Saturation Voltage
V
DS (on)
(V)
Pulse Test
2 A
100
50
20
10
1
0.1
0.2
0.5
1.0
5
Drain Current I
D
(A)
0.05
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
15 V
V
GS
= 10 V
2
5
2
Static Drain to Source on State Resistance
R
DS (on)
(
)
10
8
6
4
2
0
0
40
80
120
160
Case Temperature T
C
(C)
40
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 10 V
Pulse Test
Static Drain-Source on State Resistance
R
DS (on)
(
)
I
D
= 2 A
0.5 A
1 A
Forward Transfer Admittance
vs. Drain Current
5
2
1.0
0.5
0.05
0.1
0.2
1.0
2
5
Drain Current I
D
(A)
0.1
0.2
0.5
V
DS
= 20 V
Pulse Test
75C
25C
Forward Transfer Admittance
yfs
(S)
T
C
= 25C
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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