2SK1318
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
= 100A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
= 16V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
250
A
V
DS
= 100V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
R
DS(on)
--
0.095
0.12
I
D
= 10A, V
GS
= 10V*
1
resistance
--
0.11
0.16
I
D
= 10A, V
GS
= 4V*
1
Forward transfer admittance
|y
fs
|
10
17
\
S
I
D
= 10A, V
DS
= 10V*
1
Input capacitance
Ciss
--
1300
\
pF
V
DS
= 10V, V
GS
= 0,
Output capacitance
Coss
--
430
--
pF
f = 1MHz
Reverse transfer capacitance
Crss
--
60
--
pF
Turn-on delay time
td (on)
--
14
--
ns
I
D
= 10A,
Rise time
tr
--
70
--
ns
V
GS
= 10V, R
L
= 3
Turn-off delay time
td (off)
--
210
--
ns
Fall time
tf
--
90
--
ns
Bodydrain diode forward
voltage
V
DF
--
1.4
--
V
I
F
= 20A, V
GS
= 0
Bodydrain diode reverse
recovery time
trr
--
280
--
ns
I
F
= 20A, V
GS
= 0,
diF / dt = 50A / s
Note:
1. Pulse test
2SK1318
5
5
8
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
4
1
4
12
16
0
2
3
10 A
I
D
= 20 A
Pulse Test
5 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1
2
50
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.5
0.02
1
5
20
0.5
0.1
0.2
0.05
0.01
10
10 V
V
GS
= 4 V
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
0.25
40
160
Case Temperature T
C
(
C)
Static Drain to Source on State Resistance
R
D
S (on)
(
)
0.2
0.05
0
80
120
0
0.1
0.15
I
D
= 20 A
Pulse Test
10 A
--40
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 4 V
V
GS
= 10 V
5 A
10 A
5 A
100
2
50
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
50
5
1
5
20
1
10
20
Forward Transfer Admittance
vs. Drain Current
Tc = --25
C
V
DS
= 10 V
Pulse Test
0.5
2
10
25
C
75
C
2SK1318
10
Cautions
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