2SC5218
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
Marking is "YK".
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 9 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
0.8
1.4
pF
V
CB
= 5 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product
f
T
6.0
9.0
--
GHz
V
CE
= 5 V, I
C
= 20 mA
Power gain
PG
10
13
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.2
2.5
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
2SC5218
3
150
100
50
Ambient Temperature Ta (
C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
200
160
120
80
40
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0
DC Current Transfer Ratio vs.
Collector Current
0.1
V = 5 V
Pulse Test
CE
1
10
100
10
8
6
4
2
1
Collector Current I (mA)
C
0
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f (GHz)
T
2
5
10
20
50
100
V = 5V
CE
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
Collector Output Capacitance vs.
Collector to Base Voltage
0.5
1
2
5
10
20
50
2.0
1.2
1.6
0.4
0.8
0
I = 0
f = 1 MHz
E
2SC5218
5
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2 .4
.6 .8
2
3 4 5
1.5
10
S11 Parameter vs. Frequency
1.0
Scale: 6 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S12 Parameter vs. Frequency
Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
S22 Parameter vs. Frequency
1.0
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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