2SK1336
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
0.3
A
Drain peak current
I
D(pulse)
*
1
1.2
A
Body to drain diode reverse drain current
I
DR
0.3
A
Channel dissipation
Pch
400
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
50
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
1.3
1.7
I
D
= 0.2 A, V
GS
= 10 V *
1
--
1.8
2.5
I
D
= 0.2 A, V
GS
= 4 V *
1
Forward transfer admittance
|yfs|
0.22
0.35
--
S
I
D
= 0.2 A, V
DS
= 10 V *
1
Input capacitance
Ciss
--
33
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
17
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
5
--
pF
Turn-on delay time
t
d(on)
--
2
--
ns
I
D
= 0.2 A, V
GS
= 10 V,
Rise time
t
r
--
4
--
ns
R
L
= 150
Turn-off delay time
t
d(off)
--
18
--
ns
Fall time
t
f
--
16
--
ns
Body to drain diode forward
voltage
V
DF
--
0.9
--
V
I
F
= 0.3 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
45
--
ns
I
F
= 0.3 A, V
GS
= 0,
di
F
/dt = 50 A/
s
Note:
1. Pulse test
2SK1336
4
1.0
4
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
0.8
0.2
2
6
8
0
0.4
0.6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
0.2 A
I
D
= 0.1A
0.5 A
50
5
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.05
Static Drain to Source on State
Resistance vs. Drain Current
20
10
2
5
1
0.5
Drain Current I
D
(A)
0.1
0.2
0.5
1
2
Pulse Test
V
GS
= 4 V
10 V
5
40
160
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
4
1
0
80
120
0
2
3
Static Drain to Source on State
Resistance vs. Temperature
40
Pulse Test
V
GS
= 4 V
I
D
= 0.5 A
0.2 A
0.1 A
0.5 A
0.2 A
0.1 A
10 V
5
2
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
Forward Transfer Admittance
vs. Drain Current
0.02
2
1
0.5
0.2
0.1
0.05
0.05
0.1
1
0.5
0.2
V
DS
= 10 V
Pulse Test
T
C
= 75C
25C
25C
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
PDF 
ZIP
