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Электронный компонент: 2SK1400

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2SK1400, 2SK1400A
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
1
2
3
TO-220AB
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
2SK1400, 2SK1400A
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1400
V
DSS
300
V
2SK1400A
350
Gate to source voltage
V
GSS
30
V
Drain current
I
D
7
A
Drain peak current
I
D(pulse)
*
1
28
A
Body to drain diode reverse drain current
I
DR
7
A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at T
C
= 25
C
2SK1400, 2SK1400A
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
K1400
V
(BR)DSS
300
--
--
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
K1400A
350
--
--
Gate to source breakdown
voltage
V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
25 V, V
DS
= 0
Zero gate voltage
K1400
I
DSS
--
--
250
A
V
DS
= 240 V, V
GS
= 0
drain current
K1400A
V
DS
= 280 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
3.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source K1400
R
DS(on)
--
0.50
0.70
I
D
= 4 A, V
GS
= 10 V *
1
on state resistance
K1400A
--
0.60
0.80
Forward transfer admittance
|yfs|
3.0
5.0
--
S
I
D
= 4 A, V
DS
= 10 V *
1
Input capacitance
Ciss
--
635
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
230
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
40
--
pF
Turn-on delay time
t
d(on)
--
10
--
ns
I
D
= 4 A, V
GS
= 10 V,
Rise time
t
r
--
50
--
ns
R
L
= 7.5
Turn-off delay time
t
d(off)
--
60
--
ns
Fall time
t
f
--
40
--
ns
Body to drain diode forward
voltage
V
DF
--
1.0
--
V
I
F
= 7 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
240
--
ns
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/
s
Note:
1. Pulse test
2SK1400, 2SK1400A
4
60
40
20
0
50
100
150
Case Temperature T
C
(C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
50
5
0.2
0.05
10
100
1,000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
1
0.1
1
3
30
300
Ta = 25C
10
s
100
s
DC Operation (T
C
= 25C)
1 ms
PW = 10 ms (1 Shot)
0.5
2
10
2SK1400
2SK1400A
Operation in this area
is limited by R
DS (on)
10
8
20
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
2
4
12
16
Pulse Test
0
4
6
4.5 V
V
GS
= 3.5 V
15 V
Drain Current I
D
(A)
10 V
6 V
5.5 V
5 V
4 V
10
4
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
8
2
2
6
8
25C
0
4
6
V
DS
= 20 V
Pulse Test
75C
Ta
= 25C
2SK1400, 2SK1400A
5
10
8
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
4
12
16
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
I
D
= 10 A
Pulse Test
2 A
5
2
50
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
2
0.1
1.0
5
20
0.5
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
10
15 V
Pulse Test
V
GS
= 10 V
2.0
40
160
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
1.6
0.4
0
80
120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
V
GS
= 10 V
40
10 A
5 A
2 A
50
0.2
10
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
20
2
0.1
0.5
2
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
V
DS
= 20 V
Pulse Test
1
1
5
75C
25C
T
C
= 25C
2SK1400, 2SK1400A
6
500
0.2
5
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns) 200
20
1
5
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/
s, V
GS
= 0
Ta = 25C
Pulse Test
10
0.5
2
10
20
20
50
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
100
10
30
40
Static Drain-Source on State
Resistance vs. Drain Current
0
10
Crss
Coss
Ciss
V
GS
= 0 V
f = 1 MHz
1,000
10,000
500
16
40
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
400
24
0
32
300
200
100
V
DD
= 50 V
V
DS
Dynamic Input Characteristics
V
DD
= 50V
100 V
20
Gate to Source Voltage V
GS
(V)
16
12
8
4
0
0
8
200 V
100 V
200 V
V
GS
I
D
= 7 A
500
0.5
10
Drain Current I
D
(A)
Switching Time t (ns)
200
20
0.2
1
5
5
50
100
0.1
10
2
Switching Characteristics
t
f
t
d (on)
t
d (off)
t
r
V
GS
= 10 V V
DD
= 30 V
PW = 2
s, duty < 1%

2SK1400, 2SK1400A
7
10
2.0
Source to Drain Voltage V
SD
(V)
Reverse Dratin Current I
DR
(A)
8
0.4
0.8
1.6
0
4
6
0
2
1.2
Pulse Test
5 V, 10 V
V
GS
= 0, 5 V
Reverse Drain Current vs.
Sourse to Drain Voltage
3
Pulse Width PW (s)
Normalized Transient Thermal Impedance
S
(t)
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
T
C
= 25C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
T
PW
P
DM
D =
T
PW
chc (t) =
S
(t)
chc
chc = 2.50C/W, T
C
= 25C
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
V
DD
30 V
=
.
.
R
L
Waveforms
Vin
Vout
t
d (on)
10%
t
r
t
f
10%
90%
10%
90%
t
d (off)
90%
0.5
0.1
2.54
0.5
0.76
0.1
14.0
0.5
15.0
0.3
2.79
0.2
18.5
0.5
7.8
0.5
10.16
0.2
2.54
0.5
1.26
0.15
4.44
0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
0.1
3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
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