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Электронный компонент: 2SK1622

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Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
--------------------------------------------------------------------------------------
Drain to source voltage
V
DSS
60
V
--------------------------------------------------------------------------------------
Gate to source voltage
V
GSS
20
V
--------------------------------------------------------------------------------------
Drain current
I
D
25
A
--------------------------------------------------------------------------------------
Drain peak current
I
D(pulse)
*
100
A
--------------------------------------------------------------------------------------
Body to drain diode reverse drain current
I
DR
25
A
--------------------------------------------------------------------------------------
Channel dissipation
Pch**
50
W
--------------------------------------------------------------------------------------
Channel temperature
Tch
150
C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
C
--------------------------------------------------------------------------------------
*
PW
10 s, duty cycle
1 %
**
Value at T
C
= 25 C
2SK1622
L
, 2SK1622
S
Silicon N-Channel MOS FET
1
2
3
2, 4
1
3
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
S type
L type
LDPAK
Table 2 Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
--------------------------------------------------------------------------------------
Drain to source breakdown
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source breakdown
V
(BR)GSS
20
--
--
V
I
G
= 100 A, V
DS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source leak current
I
GSS
--
--
10
A
V
GS
= 16 V, V
DS
= 0
--------------------------------------------------------------------------------------
Zero gate voltage drain current
I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
--------------------------------------------------------------------------------------
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
--------------------------------------------------------------------------------------
Static Drain to source on state
R
DS(on)
--
0.033
0.04
I
D
= 15 A, V
GS
= 10 V *
resistance
----------------------
-- -- -- -- -- -- -- -- -- --
--
0.05
0.06
I
D
= 15 A, V
GS
= 4 V *
--------------------------------------------------------------------------------------
Forward transfer admittance
|y
fs
|
12
20
--
S
I
D
= 15 A, V
DS
= 10 V *
--------------------------------------------------------------------------------------
Input capacitance
Ciss
--
1400
--
pF
V
DS
= 10 V, V
GS
= 0,
----------------------------------------------------------------
Output capacitance
Coss
--
720
--
pF
f = 1 MHz
----------------------------------------------------------------
Reverse transfer capacitance
Crss
--
220
--
pF
--------------------------------------------------------------------------------------
Turn-on delay time
t
d(on)
--
15
--
ns
I
D
= 15 A, V
GS
= 10 V,
----------------------------------------------------------------
Rise time
t
r
--
130
--
ns
R
L
= 2
----------------------------------------------------------------
Turn-off delay time
t
d(off)
--
270
--
ns
----------------------------------------------------------------
Fall time
t
f
--
180
--
ns
--------------------------------------------------------------------------------------
Body to drain diode forward
V
DF
--
1.3
--
V
I
F
= 25 A, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Body to drain diode reverse
t
rr
--
135
--
ns
I
F
= 25 A, V
GS
= 0,
recovery time
di
F
/dt = 50 A/s
--------------------------------------------------------------------------------------
* Pulse Test
See characteristic curves of 2SK972.
2SK1622 L , 2SK1622 S
2SK1622 L , 2SK1622 S
50
100
0
Case Temperature T
C
(C)
150
20
Channel Dissipation Pch
(W)
40
60
Power vs. Temperature Derating