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Электронный компонент: 2SK214

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2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
Features
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
1
2
3
TO-220AB
1. Gate
2. Source
(Flange)
3. Drain
D
G
S
2SK213, 2SK214, 2SK215, 2SK216
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK213
V
DSX
140
V
2SK214
160
2SK215
180
2SK216
200
Gate to source voltage
V
GSS
15
V
Drain current
I
D
500
mA
Body to drain diode reverse drain current
I
DR
500
mA
Channel dissipation
Pch
1.75
W
Pch*
1
30
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
45 to +150
C
Note:
1. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK213
V
(BR)DSX
140
--
--
V
I
D
= 1 mA, V
GS
= 2 V
breakdown voltage
2SK214
160
--
--
V
2SK215
180
--
--
V
2SK216
200
--
--
V
Gate to source breakdown
voltag
V
(BR)GSS
15
--
--
V
I
G
=
10
A, V
DS
= 0
Gate to source voltage
V
GS(on)
0.2
--
1.5
V
I
D
= 10 mA, V
DS
= 10 V *
1
Drain to source saturation
voltage
V
DS(sat)
--
--
2.0
V
I
D
= 10 mA, V
GD
= 0 *
1
Forward transfer admittance
|y
fs
|
20
40
--
mS
I
D
= 10 mA, V
DS
= 20 V *
1
Input capacitance
Ciss
--
90
--
pF
I
D
= 10 mA, V
DS
= 10 V,
Reverse transfer capacitance
Crss
--
2.2
--
pF
f = 1 MHz
Note:
1. Pulse test
2SK213, 2SK214, 2SK215, 2SK216
3
50
100
0
Case Temperature T
C
(C)
150
20
Channel Dissipation Pch
(W)
Power vs. Temperature Derating
40
60
100
200
300
Typical Output Characteristics
12
400
500
Drain to Source Voltage V
DS
(V)
T
C
= 25C
3.0
V
GS
= 0.5 V
2.5
2.0
1.5
1.0
3.5
Drain Current I
D
(mA)
16
8
4
0
20
Typical Output Characteristics
0.8
V
GS
= 0.1V
T
C
= 25C
10
20
30
60
40
50
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(mA)
80
40
20
0
100
0.7
0.6
0.5
0.4
0.3
0.2
T
C
= 25C
25
75
Typical Transfer Characteristics
3
Gate Source Voltage V
GS
(V)
4
2
1
0
5
100
200
300
400
500
Drain Current I
D
(mA)
0
V
DS
= 20 V
2SK213, 2SK214, 2SK215, 2SK216
4
T
C
= 25C
25 75
Typical Transfer Characteristics
1.2
Gate Source Voltage V
GS
(V)
1.6
0.8
0.4
0
2.0
20
40
60
80
100
Drain Current I
D
(mA)
0
V
DS
= 20 V
Forward Transfer Admittance
vs. Drain Current
T
C
= 25C
V
DS
= 20 V
50
Drain Current I
D
(mA)
100
10
5
2
200
10
20
50
100
200
Forward Transfer Admittance
yfs
(mS)
5
20
100
10 k
100 k
1.0
10
Forward Transfer Admittance
yfs
(mS)
Forward Transfer Admittance
vs. Frequency
1 M
500
50 M
0.05
5 k
0.1
Frequency f (H
Z
)
10 M
T
C
= 25C
V
DS
= 20 V
I
D
= 10 mA
0.5
0.1
2.54
0.5
0.76
0.1
14.0
0.5
15.0
0.3
2.79
0.2
18.5
0.5
7.8
0.5
10.16
0.2
2.54
0.5
1.26
0.15
4.44
0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
0.1
3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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