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Электронный компонент: 2SK2221

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2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
1
2
3
TO-3P
1. Gate
2. Source
(Flange)
3. Drain
D
G
S
2SK2220, 2SK2221
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK2220
V
DSX
180
V
2SK2221
200
Gate to source voltage
V
GSS
20
V
Drain current
I
D
8
A
Body to drain diode reverse drain current
I
DR
8
A
Channel dissipation
Pch*
1
100
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note
1. Value at Tc = 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK2220
V
(BR)DSX
180
--
--
V
I
D
= 10 mA, V
GS
= 10 V
breakdown
voltage
2SK2221
200
--
--
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
0.15
--
1.45
V
I
D
= 100 mA
V
DS
= 10 V
Drain to source saturation
voltage
V
DS(sat)
--
--
12
V
I
D
= 8 A, V
GD
= 0 V*
1
Forward transfer admittance
|y
fs
|
0.7
1.0
1.4
S
I
D
= 3 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
600
--
pF
V
GS
= 5 V
Output capacitance
Coss
--
800
--
pF
V
DS
= 10 V
Reverse transfer capacitance
Crss
--
8
--
pF
f = 1 MHz
Turn-on time
t
on
--
250
--
ns
V
DD
= 30 V
Turn-off time
t
off
--
90
--
ns
I
D
= 4 A
Note
1. Pulse Test
2SK2220, 2SK2221
3
150
100
50
Channel Dissipation Pch (W)
50
100
150
Case Temperature Tc (
C)
Power vs. Temperature Derating
0
20
5
1.0
0.2
20
100
500
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
10
0.5
5
10
50
200
Ta = 25C
DC Operation (T
C
= 25C)
PW = 100 ms (1 Shot)
2
PW = 10 ms (1 Shot)
2SK2220
2SK2221
10
20
50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
2
10
30
40
0
4
6
4
Drain Current I
D
(A)
Pch = 125 W
V
GS
=
10 V
0
1
2
3
6
5
7
8
9
T
C
= 25C
10
4
10
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
2
2
6
8
0
4
6
Drain Current I
D
(A)
V
GS
= 10 V
0
8
9
T
C
= 25C
7
6
5
4
3
2
1
2SK2220, 2SK2221
4
10
4
10
Gate to Source Voltage V
GS
(V)
Typical Transfer Characteristics
8
2
2
6
8
0
4
6
25
V
DS
= 10 V
Drain Current I
D
(A)
T
C
= 25C
75
1.0
0.8
2.0
Gate to Source Voltage V
GS
(V)
Typical Transfer Characteristics
0.8
0.2
0.4
1.2
1.6
0
0.4
0.6
25
V
DS
= 10 V
Drain Current I
D
(A)
T
C
= 25C
75
5
10 k
20 M
Frequency f (Hz)
Forward Transfer Admittance
yfs
(S)
1.0
0.01
2 k
1 M
0.1
Forward Transfer Admittance
vs. Frequency
T
C
= 25C
V
DS
= 10 V
I
D
= 2 A
0.001
0.0005
100 k
10 M
500
0.5
10
Drain Current I
D
(A)
Switching Time t
on,
t
off
(ns)
200
20
0.2
1.0
5
5
50
100
0.1
10
2
Switching Time vs. Drain Current
t
off
t
on
2SK2220, 2SK2221
5
Switching Time Test Circuit
Input
PW = 50
s
duty ratio
= 1%
50
30 V
R
Output
L
Waveforms
Output
t
on
10%
10%
90%
t
off
90%
Input
3.2
0.2
4.8
0.2
1.5
0.3
2.8
0.6
0.2
1.0
0.2
18.0
0.5
19.9
0.2
15.6
0.3
0.5
1.0
5.0
0.3
1.6
1.4 Max
2.0
2.0
14.9
0.2
3.6
0.9
1.0
5.45
0.5
5.45
0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
--
Conforms
5.0 g
Unit: mm
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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