2SK2390
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Avalanche ratings
Outline
1
2
3
TO-220CFM
1. Gate
2. Drain
3. Source
D
G
S
2SK2390
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
12
A
Drain peak current
I
D(pulse)
*
1
48
A
Body to drain diode reverse drain current
I
DR
12
A
Avalanche current
I
AP
*
3
12
A
Avalanche energy
E
AR
*
3
12
mJ
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes 1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
3. Value at Tch = 25
C, Rg
50
2SK2390
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.25
V
ID = 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.075
0.09
I
D
= 6 A
V
GS
= 10 V*
1
--
0.11
0.15
I
D
= 6 A
V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
4
8
--
S
I
D
= 6 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
450
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
240
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
60
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
10
--
ns
I
D
= 6 A
Rise time
t
r
--
55
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
100
--
ns
R
L
= 5
Fall time
t
f
--
70
--
ns
Body to drain diode forward
voltage
V
DF
--
1.05
--
V
I
F
= 12 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
95
--
ns
I
F
= 12 A, V
GS
= 0,
diF / dt = 50 A /
s
Note
1. Pulse Test
2SK2390
4
40
30
20
10
0
Channel Dissipation Pch (W)
50
100
150
200
Case Temperature Tc (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
200
100
20
50
10
2
5
1
0.2
0.5
1
2
5
10
20
50
100
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25C)
100 s
10 s
Operation in
this area is
limited by R
DS(on)
Ta = 25 C
20
16
12
8
4
0
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
2
4
6
8
10
Pulse Test
3.5 V
4 V
5 V
10 V
3 V
6 V
2.5 V
V = 2 V
GS
20
16
12
8
4
0
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
2
4
6
8
10
V = 10 V
Pulse Test
DS
Tc = 75C
25C
25C
2SK2390
5
2.0
1.6
1.2
0.8
0.4
0
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2
4
6
8
10
Pulse Test
I = 15 A
D
10 A
5 A
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
1
2
5
10
20
50
100
1
0.2
0.5
0.1
0.02
0.01
0.05
Pulse Test
V = 4 V
GS
10 V
0.5
0.4
0.3
0.2
0.1
40
0
40
80
120
160
Case Temperature Tc (C)
0
R ( )
DS(on)
Static Drain to Source on State Resistance
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature
I = 15 A
D
V = 4 V
GS
10 V
5 A
10 A
5 A, 10 A, 15 A
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
20
10
2
5
1
0.2
0.5
0.2
0.5
1
2
5
10
20
25 C
Tc = 25 C
75 C
DS
V = 10 V
Pulse Test
2SK2390
6
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.1
0.3
1
3
10
30
100
500
200
100
20
50
10
5
di/dt = 50 A/
s
V = 0, Ta = 25
C
GS
0
10
20
30
40
50
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
10
1000
200
500
100
20
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
100
80
60
40
20
0
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
20
16
12
8
4
0
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
V = 10 V
25 V
50 V
DD
V
GS
DS
V
I = 15 A
D
V = 50 V
25 V
10 V
DD
8
16
24
32
40
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
t f
r
t
d(on)
t
d(off)
t
500
200
100
20
50
10
5
0.2
0.5
1
2
5
10
20
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS
DD
2SK2390
7
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Souece to Drain Voltage
Pulse Test
V = 0, 5 V
GS
10 V
5 V
20
16
12
8
4
Channel Temperature Tch (C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
25
50
75
100
125
150
0
I = 12 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = L I
2
1
V
V V
AR
AP
DSS
DSS
DD
2
Avalanche Test Circuit and Waveform
2SK2390
8
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 6.25 C/W, Tc = 25 C
Tc = 25C
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit
Waveform
2SK2390
9
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of this document without Hitachi's permission.
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other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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