ChipFind - документация

Электронный компонент: 2SK2684S

Скачать:  PDF   ZIP
2SK2684(L), 2SK2684(S)
Silicon N Channel DVL MOS FET
High Speed Power Switching
ADE-208-542
1st. Edition
Features
Low on-resistance
R
DS(on)
= 20 m
typ. (V
GS
= 10V, I
D
= 15 A)
4V gate drive devices.
High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
2SK2684(L), 2SK2684(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)
*
1
120
A
Body to drain diode reverse drain current
I
DR
30
A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
2SK2684(L), 2SK2684(S)
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state R
DS(on)
--
20
28
m
I
D
= 15A, V
GS
= 10V*
1
resistance
R
DS(on)
--
35
50
m
I
D
= 15A, V
GS
= 4V*
1
Forward transfer admittance
|y
fs
|
12
18
--
S
I
D
= 15A, V
DS
= 10V*
1
Input capacitance
Ciss
--
750
--
pF
V
DS
= 10V
Output capacitance
Coss
--
520
--
pF
V
GS
= 0
Reverse transfer capacitance Crss
--
210
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
16
--
ns
V
GS
= 10V, I
D
= 15A
Rise time
t
r
--
260
--
ns
R
L
= 0.67
Turn-off delay time
t
d(off)
--
85
--
ns
Fall time
t
f
--
90
--
ns
Body to drain diode forward
voltage
V
DF
--
1.0
--
V
I
F
= 30A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
45
--
ns
I
F
= 30A, V
GS
= 0
diF/ dt = 50A/
s
Note:
1. Pulse test
2SK2684(L), 2SK2684(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
500
200
100
20
50
10
2
5
1
0.5
0.1
0.3
1
3
10
30
100
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
2
4
6
8
10
3.5 V
4 V
5 V
10 V
V = 3 V
GS
6 V
4.5 V
Tc = 75
C
25
C
25
C
Ta = 25
C
100
s
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25
C)
10
s
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
2SK2684(L), 2SK2684(S)
5
1.0
0.8
0.6
0.4
0.2
0
4
8
12
16
20
1
10
100
2
50
500
200
100
20
50
10
5
100
80
60
40
20
40
0
40
80
120
160
0
0.1
0.3
1
3
10
30
100
100
30
3
10
0.3
1
0.1
I = 20 A
D
5 A
10 A
20
5
V = 4 V
GS
10 V
I = 20 A
D
V = 4 V
GS
10 V
5, 10 A
5, 10, 20 A
25
C
Tc = 25
C
75
C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
R (m )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
2SK2684(L), 2SK2684(S)
6
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
10000
2000
5000
1000
100
200
500
50
40
30
20
10
0
20
16
12
8
4
8
16
24
32
40
0
1000
300
30
100
3
10
1
di / dt = 50 A /
s
V = 0, Ta = 25
C
GS
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 5 V
10 V
25 V
DD
I = 30 A
D
V
GS
V
DS
V = 25 V
10 V
5 V
DD
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
V = 10 V, V = 10 V
PW = 5
s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
2SK2684(L), 2SK2684(S)
7
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
V = 0, 5 V
GS
10 V
5 V
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 2.5
C/W, Tc = 25
C

Tc = 25
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Test
2SK2684(L), 2SK2684(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit
Waveform
2SK2684(L), 2SK2684(S)
9
Package Dimensions
Unit: mm
10.2
0.3
(1.4)
8.6
0.3
1.27
0.2
1.2
0.2
2.54
0.5
11.3
0.5
(1.5)
0.86
+0.2
0.1
3.0
+0.3
0.5
0.76
0.1
10.0
+0.3
0.5
2.54
0.5
4.44
0.2
1.3
0.2
2.59
0.2
0.4
0.1
11.0
0.5
10.2
0.3
(1.4)
8.6
0.3
1.27
0.2
2.54
0.5
(1.5)
0.86
+0.2
0.1
10.0
+0.3
0.5
2.54
0.5
4.44
0.2
1.3
0.2
2.59
0.2
0.4
0.1
1.2
0.2
(1.5)
0.1
+0.2
0.1
L type
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
--
--
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: