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Электронный компонент: 2SK2828

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2SK2828
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-514 C (Z)
4th. Edition
Feb 1999
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DCDC converter
Avalanche ratings
Outline
TO3P
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
1
2
3
D
S
G
2SK2828
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
700
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
12
A
Drain peak current
I
D(pulse)
*
1
48
A
Body-drain diode reverse drain current
I
DR
12
A
Channel dissipation
Pch*
2
175
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
2SK2828
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
700
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
25V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
100
A
V
DS
= 560 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
3.0
V
I
D
= 1mA, V
DS
= 10V*
3
Static drain to source on state
resistance
R
DS(on)
--
0.9
1.2
I
D
= 6A, V
GS
= 10V*
3
Forward transfer admittance
|y
fs
|
5.5
9.0
--
S
I
D
= 6A, V
DS
= 10V*
3
Input capacitance
Ciss
--
1850
--
pF
V
DS
= 10V
Output capacitance
Coss
--
400
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
45
--
pF
f = 1MHz
Total gate charge
Qg
--
35
--
nc
V
DD
= 400V
Gate to source charge
Qgs
--
8
--
nc
V
GS
= 10V
Gate to drain charge
Qgd
--
10
--
nc
I
D
= 12A
Turn-on delay time
t
d(on)
--
25
--
ns
I
D
= 6A, R
L
= 5
Rise time
t
r
--
65
--
ns
V
GS
= 10V
Turn-off delay time
t
d(off)
--
140
--
ns
Fall time
t
f
--
55
--
ns
Bodydrain diode forward voltage
V
DF
--
0.95
--
V
I
F
= 12A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
2.5
--
s
I
F
= 12A, V
GS
= 0
diF/ dt =100A/
s
Note:
3. Pulse test
2SK2828
4
Main Characteristics
200
150
100
50
0
50
100
150
200
100
20
50
10
2
5
1
0.5
10
5
20
50
100
500 1000
20
16
12
8
4
0
10
20
30
40
50
20
16
12
8
4
0
2
4
6
8
10
0.2
0.1
200
10 s
100 s
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25C)
Ta = 25 C
10 V
V = 4 V
GS
6 V
8 V
5 V
4.5 V
Tc = 75C
25C
25C
Channel Dissipation Pch (W)
Case Temperature Tc (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
Drain Current I (A)
D
2SK2828
5
20
16
12
8
4
0
4
8
12
16
20
1
5
20
100
2
10
50
2
1
0.5
0.2
0.1
4.0
3.2
2.4
1.6
0.8
40
0
40
80
120
160
0
0.2
1
2
10
20
10
20
2
5
1
0.5
I = 10 A
D
5 A
I = 10 A
D
V = 10 V
GS
5 A
0.5
5
5
0.05
V = 10, 15V
GS
50
25 C
Tc = 25 C
75 C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R ( )
DS(on)
Static Drain to Source on State Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
2SK2828
6
0.1 0.2
1
2
10 20
50
0.05
2
5
1
0.2
0.5
0.1
0
10
20
30
40
50
2000
5000
1000
100
200
500
1000
800
600
400
200
0
20
16
12
8
4
20
40
60
80
100
0
200
500
100
50
0.1
0.3
1
3
10
30
100
20
50
10
5
V = 100 V
250 V
400 V
DD
V = 400 V
250 V
100 V
DD
0.5
5
di / dt = 100 A /
s
V = 0, Ta = 25
C
GS
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
20
10
5
t f
r
t
d(on)
t
d(off)
t
V = 10 V, V = 30 V
PW = 5
s, duty < 1 %
GS
DD
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
I
D
= 12 A
V
GS
V
DS
2SK2828
7
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 0.71 C/W, Tc = 25 C
q g q
q
Tc = 25C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
0
0.4
0.8
1.2
1.6
2.0
50
40
30
20
10
V = 0, 5 V
GS
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
g
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Test
2SK2828
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
W
90%
10%
t
f
Switching Time Test Circuit
Switching Time Waveform
2SK2828
9
Package Dimentions
Unit: mm
16.0 max
1.0 0.2
1.0 typ
3.2 0.2
f
5.0 0.3
14.9 0.2
20.1 max
18.0 0.5
2.0 typ
0.5 typ
1.4 max
2.0 typ
0.9 typ
1.0 typ
3.6 typ
5.45 0.2
5.45 0.2
5.0 max
0.3 typ
1.5 typ
2.8 typ
0.6 0.2
1.6 typ
Hitachi Code
EIAJ
JEDEC
TO3P
SC65
--
2SK2828
10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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responsibility for problems that may arise with third party's rights, including intellectual property rights, in
connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi's sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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