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Электронный компонент: 2SK3070

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2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
Low on-resistance
R
DS(on)
= 4.5 m
typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Datasheet Title
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
75
A
Drain peak current
I
D(pulse)
Note1
300
A
Body-drain diode reverse drain current
I
DR
75
A
Avalanche current
I
AP
Note3
50
A
Avalanche energy
E
AR
Note3
333
mJ
Channel dissipation
Pch
Note2
100
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. Value at Tch = 25
C, Rg
50
Datasheet Title
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
40
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
20 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 40 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
I
D
= 1 mA, V
DS
= 10 V
Note1
Static drain to source on state
R
DS(on)
--
4.5
5.8
m
I
D
= 40 A, V
GS
= 10 V
Note1
resistance
--
6.5
10
m
I
D
= 40 A, V
GS
= 4 V
Note1
Forward transfer admittance
|y
fs
|
50
80
--
S
I
D
= 40 A, V
DS
= 10 V
Note1
Input capacitance
Ciss
--
6800
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
1300
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
380
--
pF
f = 1 MHz
Total gate charge
Qg
--
130
--
nc
V
DD
= 25 V
Gate to source charge
Qgs
--
25
--
nc
V
GS
= 10 V
Gate to drain charge
Qgd
--
30
--
nc
I
D
= 75 A
Turn-on delay time
t
d(on)
--
60
--
ns
V
GS
= 10 V, I
D
= 40 A
Rise time
t
r
--
300
--
ns
R
L
= 0.75
Turn-off delay time
t
d(off)
--
550
--
ns
Fall time
t
f
--
400
--
ns
Bodydrain diode forward voltage
V
DF
--
1.05
--
V
I
F
= 75 A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
90
--
ns
I
F
= 75 A, V
GS
= 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
Datasheet Title
4
Main Characteristics
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
2
4
6
8
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
C
10
s
100
s
1 ms
DC Operation
(Tc = 25
C)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V = 10 V
GS
5 V
4 V
2.5 V
100
80
60
40
20
0
1
2
3
4
5
Tc = 25
C
25
C
75
C
V = 10 V
Pulse Test
DS
Pulse Test
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Datasheet Title
5
0
4
8
12
16
20
20
16
12
8
4
50
0
50
100
150
200
0
V = 10 V
GS
4 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
Pulse Test
I = 50 A
D
20 A
10 A
1
30
100
3
100
2
5
1
10
300
20
10
V = 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I = 50 A
D
10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = 25
C
75
C
25
C
V = 10 V
Pulse Test
DS
50
1000
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
R (m )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Datasheet Title
6
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A / s
V = 0, Ta = 25C
GS
300
20
1
100
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 75 A
D
V
GS
V
DS
DD
V = 40 V
25 V
10 V
0.5
5
500
50
50
V = 10 V, V = 30 V
PW = 5 s, duty < 1%
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
V = 40 V
25 V
10 V
DD
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
Datasheet Title
7
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
V = 0, 5 V
GS
5 V
10 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = L I
2
1
V
V V
AR
AP
DSS
DSS
DD
2
500
400
300
200
100
25
50
75
100
125
150
0
I = 50 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
Channel Temperature Tch (
C)
Repetitive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Test Circuit
Avalanche Waveform
Datasheet Title
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 1.25 C/W, Tc = 25 C

Tc = 25C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Datasheet Title
9
Package Dimensions
Unit: mm
10.2 0.3
(1.4)
8.6 0.3
1.27 0.2
1.2 0.2
2.54 0.5
11.3 0.5
(1.5)
0.86
+0.2
0.1
3.0
+0.3
0.5
0.76 0.1
10.0
+0.3
0.5
2.54 0.5
4.44 0.2
1.3 0.2
2.59 0.2
0.4 0.1
11.0 0.5
10.2 0.3
(1.4)
8.6 0.3
1.27 0.2
2.54 0.5
(1.5)
0.86
+0.2
0.1
10.0
+0.3
0.5
2.54 0.5
4.44 0.2
1.3 0.2
2.59 0.2
0.4 0.1
1.2 0.2
(1.5)
0.1
+0.2
0.1
L type
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
--
--
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