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Электронный компонент: 2SK3142

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2SK3142
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-681A (Z)
2nd. Edition
February 1999
Features
Low on-resistance
R
DS(on)
= 4 m
typ.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO220CFM
D
G
S
1. Gate
2. Drain
3. Source
2SK3142
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
60
A
Drain peak current
I
D(pulse)
Note 1
240
A
Body-drain diode reverse drain current
I
DR
60
A
Avalanche current
I
AP
Note 3
35
A
Avalanche energy
E
AR
Note 3
122
mJ
Channel dissipation
Pch
Note 2
35
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. Value at Tch = 25
C, Rg
50
2SK3142
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
20 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
I
D
= 1 mA, V
DS
= 10 V
Note 1
Static drain to source on state
R
DS(on)
--
4.0
5.0
m
I
D
= 30 A, V
GS
= 10 V
Note 1
resistance
--
5.5
8.5
m
I
D
= 30 A, V
GS
= 4 V
Note 1
Forward transfer admittance
|y
fs
|
45
75
--
S
I
D
= 30 A, V
DS
= 10 V
Note 1
Input capacitance
Ciss
--
6800
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
1550
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
500
--
pF
f = 1MHz
Total gate charge
Qg
--
130
--
nc
V
DD
= 10 V
Gate to source charge
Qgs
--
16
--
nc
V
GS
= 10 V
Gate to drain charge
Qgd
--
30
--
nc
I
D
= 60 A
Turn-on delay time
t
d(on)
--
50
--
ns
V
GS
= 10 V, I
D
= 30 A
Rise time
t
r
--
340
--
ns
R
L
= 0.33
Turn-off delay time
t
d(off)
--
560
--
ns
Fall time
t
f
--
350
--
ns
Bodydrain diode forward voltage
V
DF
--
1.0
--
V
I
F
= 60 A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
70
--
ns
I
F
= 60 A, V
GS
= 0
diF/ dt = 50 A/
s
Note:
1. Pulse test
2SK3142
4
Main Characteristics
100
80
60
40
20
0
2
4
6
8
10
Channel Dissipation Pch (W)
Case Temperature Tc (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
3 V
5 V
4 V
2.5 V
100
80
60
40
20
0
1
2
3
4
5
Tc = 25C
25C
75C
V = 10 V
Pulse Test
DS
Pulse Test
V = 10 V
GS
40
30
20
0
50
100
150
200
0.1
0.3
1
3
10
30
100
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25C
10 s
100 s
1 ms
PW = 10 ms (1 shot)
10
DC Operation (Tc = 25C)
Operation in
this area is
limited by R
DS(on)
2SK3142
5
0
4
8
12
16
20
20
16
12
8
4
50
0
50
100
150
200
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
V = 10 V
GS
4 V
Pulse Test
R (m )
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I = 50 A
D
20 A
10 A
1
30
100
3
100
0.3
1
0.1
10
1000
10
3
10, 20, 50 A
I = 50 A
D
30
300
V = 4 V
GS
10 V
Pulse Test
10, 20 A
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = 25
C
75
C
25
C
V = 10 V
Pulse Test
DS
2SK3142
6
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
1000
10000
3000
50
40
30
20
10
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
200
20
10
0.1 0.2
2
10
100
1000
500
100
200
20
50
10
di / dt = 50 A / s
V = 0, Ta = 25C
GS
300
20
1
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
100
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 60 A
D
V
GS
V
DS
V = 20 V
10 V
5 V
DS
0.5
5
V = 20 V
10 V
5 V
DS
500
50
50
V = 10 V, V = 10 V
PW = 5 s, duty < 1%
GS
DD
r
t
d(on)
t
d(off)
t
t f
30000
2SK3142
7
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SDF
Reverse Drain Current I (A)
F
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0, 5 V
GS
10 V
5 V
100
80
60
40
20
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = L I
2
1
V
V V
AR
AP
DSS
DSS
DD
2
Avalanche Test Circuit
Avalanche Waveform
200
160
120
80
40
25
50
75
100
125
150
0
Channel Temperature Tch (C)
Repetitive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
I = 35 A
V = 15 V
duty < 0.1 %
Rg > 50
AP
DD
2SK3142
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 5C/W, Tc = 25C

Tc = 25C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK3142
9
Package Dimensions
Unit: mm
10.0 0.3
1.0 0.2
1.15 0.2
0.6 0.1
2.54 0.5
2.54 0.5
4.1 0.3
12.0 0.3
2.7 0.2
4.5 0.3
0.7 0.1
13.6 1.0
15.0 0.3
3.2 0.2
2.5 0.2
Hitachi Code
EIAJ
JEDEC
TO220CFM
--
--
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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5. This product is not designed to be radiation resistant.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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