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Электронный компонент: 2SK3233

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2SK3233
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1369 (Z)
1st. Edition
Mar. 2001
Features
Low on-resistance: R
DS(on)
= 1.1
typ.
Low leakage current: IDSS = 1
A max (at VDS = 500 V)
High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
Avalanche ratings
Outline
1
2
3
1. Gate
2. Drain
3. Source
TO220CFM
D
G
S
2SK3233
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
500
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
5
A
Drain peak current
I
D
(pulse)
Note1
20
A
Body-drain diode reverse drain
current
I
DR
5
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note1
20
A
Avalanche current
I
AP
Note3
5
A
Channel dissipation
Pch
Note2
30
W
Channel to case Tehrmal Impedance
ch-c
4.17
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. Tch
150
C
2SK3233
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
30 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 500 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
3.0
--
4.0
V
V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
--
1.1
1.5
I
D
= 2.5 A, V
GS
= 10 V
Note4
Forward transfer admittance
|y
fs
|
3.0
4.5
--
S
I
D
= 2.5 A, V
DS
= 10 V
Note4
Input capacitance
Ciss
--
580
--
pF
V
DS
= 25 V
Output capacitance
Coss
--
70
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
13
--
pF
f = 1 MHz
Turn-on delay time
td(on)
--
20
--
ns
I
D
= 2.5 A
Rise time
tr
--
15
--
ns
V
GS
= 10 V
Turn-off delay time
td(off)
--
65
--
ns
R
L
= 100
Fall time
tf
--
15
--
ns
Rg = 10
Total gate charge
Qg
--
15
--
nC
V
DD
= 400 V
Gate to source charge
Qgs
--
3
--
nC
V
GS
= 10 V
Gate to drain charge
Qgd
--
8
--
nC
I
D
= 5 A
Body-drain diode forward
voltage
V
DF
--
0.85
1.3
V
I
F
= 5 A, V
GS
= 0
Body-drain diode reverse
recovery time
trr
--
400
--
ns
I
F
= 5 A, V
GS
= 0
Body-drain diode reverse
recovery charge
Qrr
--
1.5
--
C
diF/dt = 100 A/
s
Note:
4. Pulse test
2SK3233
4
Main Characteristics
40
30
20
10
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
10
30
100
300
1000
10
8
6
4
2
0
10
20
30
40
50
10
8
6
4
2
0
2
4
6
8
10
0.03
0.01
100
Ta = 25
C
V = 4V
GS
5 V
5.5 V
Tc = 75
C
25
C
25
C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V = 10 V
DS
100
s
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25
C)
10
s
4.5 V
8 V
10 V
6 V
Pulse Test
Operation in
this area is
limited by R
DS(on)
Pulse Test
2SK3233
5
20
16
12
8
4
0
2
4
6
8
10
0.1
0.5
2
10
0.2
1
5
2
1
0.5
0.2
0.1
5
4
3
2
1
40
0
40
80
120
160
0
0.1 0.2
1
2
10 20
50
50
10
20
2
5
1
0.2
0.5
0.1
V = 10 V, 15 V
GS
0.5
5
I = 5 A
D
1 A
V = 10 V
GS
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
I = 5 A
D
2 A
1 A
2 A
50
20
5
25
C
Tc = 25
C
75
C
Pulse Test
Pulse Test
DS
V = 10 V
Pulse Test
Pulse Test
2SK3233
6
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
di / dt = 100 A /
s
V = 0, Ta = 25
C
GS
0
50
100
150
200
250
2000
5000
1000
100
200
500
1000
800
600
400
200
0
20
16
12
8
4
10
20
30
40
50
0
1000
200
500
100
20
10
50
0.1
0.3
1
3
10
30
100
20
50
10
5
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 400 V
250 V
100 V
DD
I = 5 A
D
V
DS
V
GS
r
t
d(on)
t
d(off)
t
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
t f
V = 10 V, V = 250 V
PW = 10
s, duty < 1 %
R =10
GS
DD
G
V = 100 V
250 V
400 V
DD
2SK3233
7
0
0.4
0.8
1.2
1.6
2.0
10
8
6
4
2
V = 0 V
GS
5, 10 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature Tc (
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
I = 10mA
D
1mA
0.1mA
V = 10 V
DS
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 250 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Switching Time Test Circuit
Waveform
Pulse Test
2SK3233
8
Normalized Transient Thermal Impedance vs. Pulse Width
10
100
1 m
10 m
100 m
1
10
Pulse Width PW (s)
1
0.3
0.1
0.03
0.01
3
Normalized Transient Thermal Impedance
s (t)
0.001
0.003
1shot pulse
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Tc = 25
C
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 4.17
C/W, Tc = 25
C
2SK3233
9
Package Dimensions
10.0
0.3
3.2
0.2
12.0
0.3
2.7
0.2
15.0
0.3
13.60
1.0
0.7
0.1
2.5
0.2
4.5
0.3
2.54
2.54
1.0
0.2
1.15
0.2
0.6
0.1
4.1
0.3
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-220CFM
--
--
1.9 g
As of January, 2001
Unit: mm
2SK3233
10
Cautions
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright
Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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