2SK3390
Silicon N Channel MOS FET
UHF Power Amplifier
ADE-208-846 (Z)
1st. Edition
Aug.2001
Features
High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W,
add= 60 % min. (f = 836 MHz)
Compact package capable of surface mounting
Outline
RP8P
1
2
3
1. Gate
2. Source
3. Drain
D
G
S
1
2
3
Note:
Marking is "IX".
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
2SK3390
Rev.0, Aug. 2001, page 2 of 7
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
17
V
Gate to source voltage
V
GSS
10
V
Drain current
I
D
1
A
Drain peak current
I
D(pulse)
Note1
2.5
A
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
45 to +150
C
Note:
1. PW
< 1sec, Tch < 150 C
2. Value at Tc = 25C
Electrical Characteristics
(Tc = 25C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain current
I
DSS
--
--
10
A
V
DS
= 13.7 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
5
A
V
GS
= 10V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
2.2
--
3.0
V
I
D
= 1mA, V
DS
= 13.7V
Input capacitance
Ciss
--
27.5
--
pF
V
GS
= 5V, V
DS
= 0, f = 1MHz
Output capacitance
Coss
--
10.5
--
pF
V
DS
= 13.7V, V
GS
= 0, f = 1MHz
Output Power
Pout
6.31
--
--
W
V
DS
= 13.7V, I
DO
= 0.25A
f = 836 MHz, Pin = 126 mW
Added Efficiency
add
60
--
--
%
V
DS
= 13.7V, I
DO
= 0.25A
f = 836 MHz, Pin = 126 mW
2SK3390
Rev.0, Aug. 2001, page 3 of 7
Main Characteristics
40
30
20
10
0
50
100
150
200
Channel Power Dissipation Pch (W)
Case Temperature Tc (
C)
Maximum Channel Power
Dissipation Curve
2.5
2
1.5
1
0.5
0
2
3
4
5
6
7
Gate to Source Voltage V (V)
Drain Current I (A)
Typical Transfer Characteristics
D
V = 13.7 V
DS
Pulse Test
GS
5
4
3
2
1
0
2
4
6
8
10
Typical Output Characteristics
V = 4 V
GS
6 V
5 V
Pulse Test
8 V
10 V
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
7 V
9 V
0.01
1
0.3
0.03
0.1
0.03
0.1
0.3
1
3
10
0.01
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = 13.7 V
Pulse Test
DS
3
10
Tc = - 25
C
25
C
75
C
Tc = 75
C
25
C
- 25
C
2SK3390
Rev.0, Aug. 2001, page 4 of 7
0.1
0.03
0.3
10
Drain to Source Saturatioin Voltage vs.
Drain Current
Input Capacitance vs.
Gate to Source Voltage
29
25
24
-10
- 6
- 2
2
6
10
V = 0
f = 1 MHz
DS
26
27
28
GS
V = 10 V
Pulse Test
1
3
0.01
0.03
0.1
0.3
3
10
1
V (V)
DS(sat)
Drain to Source Saturation Voltage
D
Drain Current I (A)
Input Capacitance Ciss (pF)
GS
Gate to Source Voltage V (V)
0.01
0.001
0.003
3.6
3.2
2.8
2.4
2.0
1.6
- 25
Ambient Temperature Ta (
C)
Gate to Source Cutoff Voltage
Gate to Source Cutoff Voltage vs.
Ambient Temperature
GS(off)
0
25
50
75
100
125
V = 13.7 V
DS
10 mA
V (V)
I
D
= 0.1 mA
1 mA
75
C
25
C
Tc = - 25
C
Output Capacitance vs.
Drain to Source Voltage
1
3
10
30
1
10
100
30
3
Output Capacitance Coss (pF)
DS
Drain to Source Voltage V (V)
0.1
0.3
V = 0
f = 1 MHz
GS
2SK3390
Rev.0, Aug. 2001, page 7 of 7
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