2SK740
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
150
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)
*
1
40
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
150
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 120 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
4.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.12
0.15
I
D
= 5 A, V
GS
= 10 V *
1
Forward transfer admittance
|y
fs
|
4.0
7.0
--
S
I
D
= 5 A, V
DS
= 10 V *
1
Input capacitance
Ciss
--
1200
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
550
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
85
--
pF
Turn-on delay time
t
d(on)
--
20
--
ns
I
D
= 5 A, V
GS
= 10 V,
Rise time
t
r
--
50
--
ns
R
L
= 6
Turn-off delay time
t
d(off)
--
70
--
ns
Fall time
t
f
--
40
--
ns
Body to drain diode forward
voltage
V
DF
--
1.2
--
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
220
--
ns
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/
s
Note:
1. Pulse test
2SK740
4
5
4
3
2
1
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
2 A
I
D
= 10 A
PulseTest
Drain to Source Saturation Voltage
V
DS (on)
(V)
0.5
0.2
0.1
0.05
0.005
1.0
2
5
10
50
Drain Current I
D
(A)
0.5
Static Drain to Source on State
Resistance vs. Drain Current
20
0.02
0.01
Static Drain to Source on State Resistance
R
DS (on)
(
)
15 V
V
GS
= 10 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
0
0
40
80
120
160
Case Temperature T
C
(C)
40
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(
)
2 A
5 A
10 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
1.0
2
2
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
25C
Ta = 25C
75C
V
GS
= 10 V
Pulse Test
Cautions
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