3SK239A
GaAs Dual Gate MES FET
Application
UHF RF amplifier
Features
Excellent low noise characteristics
(NF = 1.3 dB Typ at f = 900 MHz)
Capable of low voltage operation
Outline
3SK239A
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
12
V
Gate 1 to source voltage
V
G1S
6
V
Gate 2 to source voltage
V
G2S
6
V
Drain current
I
D
50
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
125
C
Storage temperature
Tstg
55 to +125
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source leakage current I
DSX
--
--
50
A
V
DS
= 12 V, V
G1S
= 3 V,
V
G2S
= 0
Gate 1 to source breakdown
voltage
V
(BR)G1SS
6
--
--
V
I
G1
= 10 A, V
G2S
= V
DS
= 0
Gate 2 to source breakdown
voltage
V
(BR)G2SS
6
--
--
V
I
G2
= 10 A, V
G1S
= V
DS
= 0
Gate 1 leakage current
I
G1SS
--
--
5
A
V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2 leakage current
I
G2SS
--
--
5
A
V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
I
DSS
14
19
28
mA
V
DS
= 5 V, V
G1S
= V
G2S
= 0
Gate 1 to source cutoff voltage V
G1S(off)
--
1.2
1.6
V
V
DS
= 5 V, V
G2S
= 0,
I
D
= 100 A
Gate 2 to source cutoff voltage V
G2S(off)
--
1.2
1.6
V
V
DS
= 5 V, V
G1S
= 0,
I
D
= 100 A
Forward transfer admittance
|y
fs
|
20
31
--
mS
V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 kHz
Input capacitance
Ciss
--
0.58
1.0
pF
V
DS
= 5 V, V
G1S
= V
G2S
= 3 V,
f = 1 MHz
Output capacitance
Coss
--
0.36
0.6
pF
Reverse transfer capacitance
Crss
--
0.028
0.05
pF
Power gain
PG
17
19
--
dB
V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 900 MHz
Noise figure
NF
--
1.3
2.0
dB
Note:
Marking is "XR".
3SK239A
6
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi's permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
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