3SK300
Silicon N Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
ADE-208-449
1st. Edition
Features
Low noise figure
NF = 1.0 dB typ. at f = 200 MHz
High gain
PG = 27.6 dB typ. at f = 200 MHz
Outline
1. Source
2. Gate1
3. Gate2
4. Drain
MPAK-4
1
4
3
2
3SK300
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
14
V
Gate 1 to source voltage
V
G1S
8
V
Gate 2 to source voltage
V
G2S
8
V
Drain current
I
D
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
3SK300
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
14
--
--
V
I
D
= 200
A, V
G1S
= 3 V,
V
G2S
= 3 V
Gate 1 to source breakdown
voltage
V
(BR)G1SS
8
--
--
V
I
G1
=
10
A,
V
DS
= V
G2S
= 0
Gate 2 to source breakdown
voltage
V
(BR)G2SS
8
--
--
V
I
G2
=
10
A,
V
DS
= V
G1S
= 0
Gate 1 cutoff current
I
G1SS
--
--
100
nA
V
G1S
=
6 V,
V
DS
= V
G2S
= 0
Gate 2 cutoff current
I
G2SS
--
--
100
nA
V
G2S
=
6 V,
V
DS
= V
G1S
= 0
Drain current
I
DS(op)
4
8
14
mA
V
DS
= 6 V, V
G1S
= 0.75 V,
V
G2S
= 3 V
Gate 1 to source cutoff voltage V
G1S(off)
0
+0.2
+1.0
V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100
A
Gate 2 to source cutoff voltage V
G2S(off)
0
+0.3
+1.0
V
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100
A
Forward transfer admittance
|y
fs
|
20
25
--
ms
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 kHz
Input capacitance
Ciss
2.4
3.1
3.5
pF
V
DS
= 6 V,
Output capacitance
Coss
0.8
1.1
1.4
pF
V
G2S
= 3 V, I
D
= 10 mA
Reverse transfer capacitance
Crss
--
0.021
0.04
pF
f = 1 MHz
Power gain
PG
24
27.6
--
dB
V
DS
= 6 V, V
G2S
= 3 V,
Noise figure
NF
--
1.0
1.5
dB
I
D
= 10 mA, f = 200 MHz
Power gain
PG
12
15.6
--
dB
V
DS
= 6 V, V
G2S
= 3 V,
Noise figure
NF
--
3.0
4.0
dB
I
D
= 10 mA, f = 900 MHz
Noise figure
NF
--
2.7
3.5
dB
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 60 MHz
Note:
Marking is "ZR"
3SK300
4
Main Characteristics
200
150
100
50
0
50
100
150
200
Channel power dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
Ambient Temperature Ta (
C
)
Drain to source voltage V
DS
(V)
Drain current I
D
(mA)
Typical Output Characteristics
20
16
12
8
4
0
2
10
4
6
8
0.8 V
1.0 V
1.2 V
0.6 V
V
G1S
= 0.4 V
V
G2S
= 3 V
Pulse test
20
16
12
8
4
0
1
2
3
4
5
Gate1 to source voltage V
G1S
(V)
Drain current I
D
(mA)
Drain Current vs. Gate1 to Source Voltage
V
G2S
= 0.5 V
2.0 V
1.5 V
3.0 V
2.5 V
1.0 V
V
DS
= 6 V
Pulse test
20
16
12
8
4
0
1
2
3
4
5
Gate2 to source voltage V
G2S
(V)
Drain current I
D
(mA)
Drain Current vs. Gate2 to Source Voltage
V
G1S
= 0.5 V
1.0 V
1.5 V
2.0 V
2.5 V
3.0 V
V
DS
= 6 V
Pulse test
3SK300
5
30
24
18
12
6
0
0.4
0.8
1.2
1.6
2
1 V
V
G2S
= 0.5 V
Gate1 to source voltage V
G1S
(V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
|y (ms)
fs|
Forward transfer admittance
1.5 V
3 V
2 V
V
DS
= 6 V
f = 1kHz
2.5 V
0
50
40
30
20
10
4
8
12
16
20
Drain current I
D
(mA)
Power gain PG (dB)
Power Gain vs. Drain Current
V
DS
= 6 V
V
G2S
= 3V
f = 200MHz
5
4
3
2
1
0
4
8
12
16
20
Drain current I
D
(mA)
Noise figure NF (dB)
Noise Figure vs. Drain Current
V
DS
= 6 V
V
G2S
= 3V
f = 200MHz
50
40
30
10
20
0
2
4
6
8
10
Drain to source voltage V
DS
(V)
Power Gain vs. Drain to Source Voltage
Power gain PG (dB)
V
G2S
= 3V
I
D
= 10mA
f = 200MHz
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