4AK15
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
R
DS(on)
0.07 , V
GS
= 10 V, I
D
= 8 A
R
DS(on)
0.095 , V
GS
= 4 V, I
D
= 8 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver, solenoid driver and lamp driver
4AK15
2
Outline
SP-10
2 G
1 S
4
G
6
G
8
G
3
D
5
D
7
D
9
D
S 10
1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1
2
3
4 5
6
7 8
9
10
Absolute Maximum Ratings (Ta = 25C) (1 Unit)
Item
Symbol
Rating
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
8
A
Drain peak current
I
D(pulse)
*
1
32
A
Body to drain diode reverse drain current
I
DR
8
A
Channel dissipation
Pch (Tc = 25
C)*
2
28
W
Channel dissipation
Pch*
2
4
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. 4 devices operation
4AK15
3
Electrical Characteristics (Ta = 25C) (1 Unit)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.055
0.07
I
D
= 8 A
V
GS
= 10 V*
1
--
0.075
0.095
I
D
= 8 A
V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
7
12
--
S
I
D
= 8 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
860
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
450
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
140
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
10
--
ns
I
D
= 8 A
Rise time
t
r
--
70
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
180
--
ns
R
L
= 3.75
Fall time
t
f
--
120
--
ns
Body to drain diode forward
voltage
V
DF
--
1.05
--
V
I
F
= 8 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
110
--
ns
I
F
= 8 A, V
GS
= 0
dIF/dt = 50 A/
s
Note:
1. Pulse test
4AK15
4
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
25
50
75
100
125
150
0
1
2
3
4
5
6
Ambient Temperature Ta (C)
Channel Dissipation Pch (W)
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
25
50
75
100
125
150
0
10
20
30
Case Temperature T
C
(C)
Channel Dissipation Pch (W)
50
10
5
0.2
0.05
1.0
10
100
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
2
1.0
0.5
0.1
0.1
0.3
3
30
Ta = 25C
100
s
1 ms
DC Operation (T
C
= 25C)
PW = 10 ms (1 Shot)
10
s
Operation in this area
is limited by R
DS (on)
Typical Output Characteristics
6
Drain to Source Voltage V
DS
(V)
8
4
2 10
Drain Current I
D
(A)
0
4
8
12
16
0
20
V
GS
= 2.5 V
Pulse Test
10 V
4 V
5 V
3.5 V
3.0 V
4AK15
5
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1
0
5
4
8
12
16
20
0
Drain Current I
D
(A)
T
C
= 25C
75C
V
DS
= 10 V
Pulse Test
25C
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
0.8
1.2
1.6
2.0
0
0.4
Pulse Test
I
D
= 5 A
20 A
10 A
10
Drain Current I
D
(A)
20
5
2
100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005
50
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(
)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(C)
120
40
0
0.04
0.08
0.12
0.16
0.20
40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(
)
I
D
= 10 A
5 A
20 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
10 A
5 A
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