3SK319
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6
V
Gate1 to source voltage
V
G1S
6
V
Gate2 to source voltage
V
G2S
6
V
Drain current
I
D
20
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
--
--
V
I
D
= 200
A, V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
6
--
--
V
I
G1
=
10
A, V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
6
--
--
V
I
G2
=
10
A, V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
--
--
100
nA
V
G1S
=
5V, V
G2S
= V
DS
= 0
Gate2 to source cutoff current
I
G2SS
--
--
100
nA
V
G2S
=
5V, V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage
V
G1S(off)
0.5
0.7
1.0
V
V
DS
= 5V, V
G2S
= 3V, I
D
= 100
A
Gate2 to source cutoff voltage
V
G2S(off)
0.5
0.7
1.0
V
V
DS
= 5V, V
G1S
= 3V, I
D
= 100
A
Drain current
I
DS(op)
0.5
4
10
mA
V
DS
= 3.5V, V
G1S
= 1.1V, V
G2S
= 3V
Forward transfer admittance
|y
fs
|
18
24
32
mS
V
DS
= 3.5V, V
G2S
= 3V
I
D
= 10mA , f=1kHz
Input capacitance
C
iss
1.3
1.6
1.9
pF
V
DS
= 3.5V, V
G2S
= 3V
Output capacitance
C
oss
0.9
1.2
1.5
pF
I
D
= 10mA , f= 1MHz
Reverse transfer capacitance
C
rss
--
0.019 0.03
pF
Power gain
PG
18
21
--
dB
V
DS
= 3.5V, V
G2S
= 3V
Noise figure
NF
--
1.4
2.2
dB
I
D
= 10mA , f=900MHz
3SK319
4
25
20
15
10
5
0
5
10
15
20
25
30
24
18
12
6
0
0.4
0.8
1.2
1.6
2.0
V = 3 V
G2S
1 V
2 V
5
4
3
2
1
0
5
10
15
20
25
25
20
15
10
5
0
2
4
6
8
10
Forward Transfer Admittance |y | (mS)
fs
Gate1 to Source Voltage V (V)
G1S
Power Gain PG (dB)
Drain Current I (mA)
D
Power Gain vs. Drain Current
Forward Transfer Admittance
vs. Gate1 Voltage
V = 3.5 V
DS
1.5 V
2.5 V
Drain Current I (mA)
D
Noise Figure NF (dB)
Noise Figure vs. Drain Current
Power Gain vs. Drain to Source Voltage
Power Gain PG (dB)
Drain to Source Voltage V (V)
DS
V = 3.5 V
V = 3 V
f = 900 MHz
DS
G2S
V = 3.5 V
V = 3 V
f = 900 MHz
DS
G2S
V = 3 V
I = 10 mA
f = 900 MHz
G2S
D
3SK319
6
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 1 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Scale: 0.002 / div.
0
30
60
90
120
150
180
150
90
60
30
120
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Test Condition :
50 to 1000 MHz (50 MHz step)
DS
G2S
V = 3.5 V , V = 3 V
I = 10mA
D
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Test Condition :
50
to
1000 MHz (50 MHz step)
DS
G2S
V = 3.5 V , V = 3 V
I = 10mA
D
Test Condition :
50 to 1000 MHz (50 MHz step)
DS
G2S
V = 3.5 V , V = 3 V
I = 10mA
D
Test Condition :
50 to 1000 MHz (50 MHz step)
DS
G2S
V = 3.5 V , V = 3 V
I = 10mA
D
3SK319
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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URL
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: http:semiconductor.hitachi.com/
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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For further information write to:
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