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Электронный компонент: 4AK23

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4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
R
DS(on)
0.25 , V
GS
= 10 V, I
D
= 2.5 A
Low drive current
High speed switching
High density mounting
Suitable for H-bridged motor driver
Outline
SP-12TA
1
G
S 3
5
G
8
G
12
G
2
D
4
D
9
D
11
D
S 6
S 7
S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
1
2
3
4
5
6
7
8
9
11
10
12
4AK23
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
100
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
5
A
Drain peak current
I
D(pulse)
*
1
20
A
Body to drain diode reverse drain current
I
DR
5
A
Channel dissipation
Pch (Tc = 25
C)*
2
32
W
Channel dissipation
Pch*
2
4
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. 4 Devices operation
4AK23
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 80 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.2
0.25
I
D
= 2.5 A
V
GS
= 10 V*
1
--
0.25
0.35
I
D
= 2.5 A
V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
3
5
--
S
I
D
= 2.5 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
525
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
205
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
60
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
5
--
ns
I
D
= 2.5 A
Rise time
t
r
--
30
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
180
--
ns
R
L
= 12
Fall time
t
f
--
65
--
ns
Body to drain diode forward
voltage
V
DF
--
1.0
--
V
I
F
= 5 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
170
--
s
I
F
= 5 A, V
GS
= 0,
dIF/dt = 50 A/
s
Note:
1. Pulse Test
See characteristic curves of 2SK1300
4AK23
4
6
0
100
50
150
Maximum Channel Dissipation Curve
Channel Dissipation Pch (W)
Ambient Temperature Tc (C)
4
2
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
48
0
100
50
150
Maximum Channel Dissipation Curve
Channel Dissipation Pch (W)
Case Temperature Tc (C)
32
16
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
50
5
1
0.1
0.1
5 10
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
10
0.5
0.05
0.5 1
20
100
1 ms
DC Operation (Tc = 25C)
100 s
0.2
2
50
0.2
2
20
10 s
PW = 10 ms (1 Shot)
Operation
in this area is
limited by R (on)
DS
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-12TA
--
--
6.1 g
Unit: mm
31.3
24.4
0.1
16.4
0.3
+0.2
0.3
3.8
3.2
2.54
1.4
0.85
0.1
2.2
0.2
0.55
+0.1
0.06
5.0
0.2
2.0
0.1
10.0
0.3
2.7
3.2
3.0
16.0
0.3
10.5
0.5
1
2
3
4
5
6
7
8
9
10 11 12
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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products.
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