4AK27
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
100
A
V
DS
= 50 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.25
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state resistance
R
DS(on)
--
0.12
0.15
I
D
= 3A, V
GS
= 10V
Note4
Static drain to source on state resistance
R
DS(on)
--
0.15
0.2
I
D
= 3A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
3.0
5.5
--
S
I
D
= 3A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
390
--
pF
V
DS
= 10V
Output capacitance
Coss
--
190
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
45
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
10
--
ns
V
GS
= 10V, I
D
= 3A
Rise time
t
r
--
42
--
ns
R
L
= 10
Turn-off delay time
t
d(off)
--
90
--
ns
Fall time
t
f
--
55
--
ns
Bodydrain diode forward voltage
V
DF
--
1.0
--
V
I
F
= 5A, V
GS
= 0
Bodydrain diode reverse recovery time
t
rr
--
60
--
ns
I
F
= 5A, V
GS
= 0
diF/ dt =50A/
s
Note:
4. Pulse test
4AK27
4
Main Characteristics
6
0
100
50
150
Maximum Channel Dissipation Curve
Channel Dissipation Pch (W)
Ambient Temperature Tc (C)
4
2
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
30
0
100
50
150
Maximum Channel Dissipation Curve
Channel Dissipation Pch (W)
Case Temperature Tc (C)
20
10
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
2 Device
Operation
1 Device
Operation
10
8
6
4
2
0
2
4
6
8
10
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Pulse Test
3 V
Typical Output Characteristics
V = 2 V
GS
2.5 V
10 V
5 V
4 V
3.5 V
10
8
6
4
2
0
1
2
3
4
5
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = 10 V
Pulse Test
DS
Typical Transfer Characteristics
Tc = 25 C
25 C
75 C
4AK27
6
5
10
500
200
100
50
20
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.1
0.2
0.5
1
2
5
10
di/dt = 50 A/
s, Ta = 25
C
V = 0, Pulse Test
GS
10
0
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
20
50
10
20
30
40
50
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
100
80
60
40
20
0
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
20
16
12
8
4
0
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
4
8
12
16
20
V
GS
DS
V
V = 50 V
25 V
10 V
DD
V = 10 V
25 V
50 V
DD
I = 5 A
D
Drain Current I (A)
D
Switching Time t (ns)
0.1
Switching Characteristics
500
200
100
20
10
5
50
0.2
0.5
1
2
5
10
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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