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Электронный компонент: 6AM14

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6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
Low drive current
High speed switching
High density mounting
Outline
6AM14
2
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
VDSS
60
60
V
Gate to source voltage
VGSS
20
20
V
Drain current
ID
7
7
A
Drain peak current
ID(pulse)*
1
28
28
A
Reverse drain current
IDR
7
7
A
Channel dissipation
Pch*2
42
W
Channel dissipation
Pch*2
4.8
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 s, duty cycle
1%
2. Value at 6 Drive operation
6AM14
3
Electrical Characteristics N Channel (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DS
S
60
--
--
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GS
S
20
--
--
V
IG = 100 A, VDS = 0
Gate to source leak current
IGSS
--
--
10
A
VGS = 16 V, VDS = 0
Zero gate voltage drain current IDSS
--
--
250
A
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off) 0.5
--
1.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on) --
0.14
0.2
ID = 4 A
VGS = 4 V*
1
--
0.22
0.5
ID = 2 A
VGS = 2.5 V*
1
Forward transfer admittance
|yfs|
4.0
6.5
--
S
ID = 4 A
VDS = 10 V*
1
Input capacitance
Ciss
--
500
--
pF
VDS = 10 V
Output capacitance
Coss
--
240
--
pF
VGS = 0
Reverse transfer capacitance
Crss
--
30
--
pF
f = 1 MHz
Turn-on delay time
td(on)
--
15
--
ns
VGS = 10 V, ID = 4 A
Rise time
tr
--
90
--
ns
RL = 7.5
Turn-off delay time
td(off)
--
110
--
ns
Fall time
tf
--
250
--
ns
Body to drain diode forward
voltage
VDF
--
1.0
--
V
IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time
trr
--
170
--
ns
IF = 7 A, VGS = 0
diF/dt = 50 A/s
Note:
1. Pulse Test
6AM14
4
Electrical Characteristics P Channel (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DS
S
60
--
--
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GS
S
20
--
--
V
IG = 100 A, VDS = 0
Gate to source leak current
IGSS
--
--
10
A
VGS = 16 V, VDS = 0
Zero gate voltage drain current IDSS
--
--
250
A
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off) 0.5
--
1.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on) --
0.12
0.16
ID = 4 A
VGS = 4 V*
1
--
0.16
0.3
ID = 2 A
VGS = 2.5 V*
1
Forward transfer admittance
|yfs|
5.0
8.0
--
S
ID = 4 A
VDS = 10 V*
1
Input capacitance
Ciss
--
1450
--
pF
VDS = 10 V
Output capacitance
Coss
--
590
--
pF
VGS = 0
Reverse transfer capacitance
Crss
--
120
--
pF
f = 1 MHz
Turn-on delay time
td(on)
--
15
--
ns
VGS = 10 V, ID = 4 A
Rise time
tr
--
75
--
ns
RL = 7.5
Turn-off delay time
td(off)
--
240
--
ns
Fall time
tf
--
180
--
ns
Body to drain diode forward
voltage
VDF
--
1.0
--
V
IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time
trr
--
210
--
ns
IF = 7 A, VGS = 0
diF/dt = 50 A/s
Note:
1. Pulse Test
6AM14
5