BB303M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-697A (Z)
2nd. Edition
Nov. 1998
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4 (SOT-143 var.)
Outline
Notes: 1. Marking is "CW".
2. BB303M is individual type number of HITACHI BBFET.
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
7
V
Gate1 to source voltage
V
G1S
0/ +7
V
Gate2 to source voltage
V
G2S
0/ +7
V
Drain current
I
D
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
BB303M
2
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
7
--
--
V
I
D
= 200
A
V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+7
--
--
V
I
G1
= +10
A
V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+7
--
--
V
I
G2
= +10
A
V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
--
--
+100
nA
V
G1S
= +5V
V
G2S
= V
DS
= 0
Gate2 to source cutoff current
I
G2SS
--
--
+100
nA
V
G2S
= +5V
V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage
V
G1S(off)
0.3
0.6
0.9
V
V
DS
= 5V, V
G2S
= 4V
I
D
= 100
A
Gate2 to source cutoff voltage
V
G2S(off)
0.5
0.8
1.1
V
V
DS
= 5V, V
G1S
= 5V
I
D
= 100
A
Drain current
I
D(op)
9
14
20
mA
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 470k
Forward transfer admittance
|y
fs
|
35
42
50
mS
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V
R
G
= 470k
, f = 1kHz
Input capacitance
c
iss
2.6
3.3
4.0
pF
V
DS
= 5V, V
G1
= 5V
Output capacitance
c
oss
1.7
2.1
2.5
pF
V
G2S
=4V, R
G
= 470k
Reverse transfer capacitance
c
rss
--
0.025
0.05
pF
f = 1MHz
Power gain
PG1
28
32
--
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
Noise figure
NF1
--
1.0
1.6
dB
f = 200MHz
Power gain
PG2
12
16.5
--
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
Noise figure
NF2
--
2.85
3.7
dB
f = 900MHz
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