BB304M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-605C (Z)
4th. Edition
August 1998
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain;
(PG = 29 dB typ. at f = 200 MHz)
Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
1
4
3
2
1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is "DW".
2. BB304M is individual type number of HITACHI BBFET.
BB304M
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
12
V
Gate1 to source voltage
V
G1S
+10
0
V
Gate2 to source voltage
V
G2S
10
V
Drain current
I
D
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
12
--
--
V
I
D
= 200
A, V
G1S
= V
G2S
= 0
Gate1 to source breakdown voltage V
(BR)G1SS
+10
--
--
V
I
G1
= +10
A, V
G2S
= V
DS
= 0
Gate2 to source breakdown voltage V
(BR)G2SS
10
--
--
V
I
G2
=
10
A, V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
--
--
+100
nA
V
G1S
= +9V, V
G2S
= V
DS
= 0
Gate2 to source cutoff current
I
G2SS
--
--
100
nA
V
G2S
=
9V, V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage
V
G1S(off)
0.4
--
1.0
V
V
DS
= 5V, V
G2S
= 4V
I
D
= 100
A
Gate2 to source cutoff voltage
V
G2S(off)
0.5
--
1.0
V
V
DS
= 5V, V
G1S
= 5V
I
D
= 100
A
BB304M
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Input capacitance
c
iss
2.3
2.8
3.6
pF
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
Output capacitance
c
oss
0.9
1.3
2.0
pF
R
G
= 180k
,
f = 1MHz
Reverse transfer capacitance c
rss
0.003
0.02
0.05
pF
Drain current
I
D(op)
1
9
15
19
mA
V
DS
= 5V, V
G1
= 5V, V
G2S
= 4V
R
G
= 180k
I
D(op)
2
--
13
--
mA
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 470k
Forward transfer admittance
|y
fs
|1
22
27
34
mS
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 180k
, f = 1kHz
|y
fs
|2
--
27
--
mS
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 470k
, f = 1kHz
Power gain
PG1
24
29
32
dB
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 180k
, f = 200MHz
PG2
--
29
--
dB
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 470k
, f = 200MHz
Noise figure
NF1
--
1.2
1.9
dB
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 180k
, f = 200MHz
NF2
--
1.2
--
dB
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 470k
, f = 200MHz
BB304M
4
Main Characteristics
Power Gain, Noise Figure Test Circuit
Gate 1
Source
Drain
Gate 2
R
G
A
I
D
V
G2
V
G1
V
G2
Input(50 )
1000p
36p
1000p
L1
V = V
D G1
R
G
BBFET
RFC
Output(50 )
L2
1000p
10p max
1000p
1000p
47k
1SV70
1000p
1000p
1000p
47k
47k
470k
V
T
V
T
Unit
@
Resistance
@
(
)
@ @
Capacitance
@
(F)
1SV70
L1 :
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
.
BB304M
5
200
150
100
50
0
50
100
150
200
0
1.2
2.4
3.8
4.8
6.0
25
20
15
10
5
0
2
4
6
8
10
0
2
4
6
8
10
25
20
15
10
5
Drain Current vs. Gate1 Voltage
Drain Current vs.
Gate2 to Source Voltage
Channel Power Dissipation Pch (mW)
mbient Temperature Ta (C)
Maximum Channel Power
Dissipation Curve
25
20
15
10
5
Drain Current I (mA)
D
Drain Current I (mA)
D
Drain to Source Voltage V (V)
Drain Current I (mA)
D
Typical Output Characteristics
DS
Gate2 to Source Voltage V (V)
G2S
Gate1 Voltage V (V)
G1
330 k
W
390 k
W
470 k
W
R = 1.5 M
G
W
V = 9 V
R = 390 k
W
DS
G
1M
W
470 k
W
V = V = 9 V
DS
G1
V = 1 V
G2S
6 V
5 V
4 V
3 V
2 V
560 k
W
680 k
W
820 k
W
R = 1.5 M
G
W
1M
W
820 k
W
680 k
W
560 k
W
390 k
W
330 k
W
270 k
W
V = 6 V
V = V
G2S
G1
DS
270 k
W
PDF 
ZIP