BB402M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-716A (Z)
2nd. Edition
Dec. 1998
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
2
1
4
3
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is "BX".
2. BB402M is individual type number of HITACHI BBFET.
BB402M
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
12
V
Gate1 to source voltage
V
G1S
+10
0
V
Gate2 to source voltage
V
G2S
10
V
Drain current
I
D
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
12
--
--
V
I
D
= 200
A, V
G1S
= V
G2S
= 0
Gate1 to source breakdown voltage V
(BR)G1SS
+10
--
--
V
I
G1
= +10
A, V
G2S
= V
DS
= 0
Gate2 to source breakdown voltage V
(BR)G2SS
10
--
--
V
I
G2
=
10
A, V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
--
--
+100
nA
V
G1S
= +9V, V
G2S
= V
DS
= 0
Gate2 to source cutoff current
I
G2SS
--
--
100
nA
V
G2S
=
9V, V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage
V
G1S(off)
0.4
0.7
1.0
V
V
DS
= 9V, V
G2S
= 6V, I
D
= 100
A
Gate2 to source cutoff voltage
V
G2S(off)
0.4
0.7
1.0
V
V
DS
= 9V, V
G1S
= 9V, I
D
= 100
A
Drain current
I
D(op)
9
13
18
mA
V
DS
= 9V, V
G1
= 9V, V
G2S
= 6V
R
G
= 120k
Forward transfer admittance
|y
fs
|
15
20
--
mS
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
R
G
= 120k
, f = 1kHz
Input capacitance
c
iss
2.2
3.0
4.0
pF
V
DS
= 9V, V
G1
= 9V
Output capacitance
c
oss
0.8
1.1
1.5
pF
V
G2S
=6V, R
G
= 120k
Reverse transfer capacitance
c
rss
--
0.017
0.04
pF
f = 1MHz
Power gain
PG
22
26
--
dB
V
DS
= 9V, V
G1
= 9V, V
G2S
=6V
Noise figure
NF
--
1.7
2.2
dB
R
G
= 120k
, f = 200MHz
BB402M
3
Main Characteristics
Power Gain, Noise Figure Test Circuit
Gate 2
Source
Drain
Gate 1
R
G
A
I
D
V
G1
V
G2
V
G2
Input (50
)
1000p
36p
1000p
L1
V = V
D G1
R
G
BBFET
RFC
Output (50
)
L2
1000p
10p max
1000p
1000p
47k
1SV70
1000p
1000p
1000p
47k
47k
120k
V
T
V
T
Unit Resistance (
)
Capacitance (F)
1SV70
L1:
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2:
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC:
1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
BB402M
4
200
150
100
50
0
50
100
150
200
25
20
15
10
5
0
1.2
2.4
3.8
4.8
6.0
20
16
12
8
4
0
2
4
6
8
10
0
2
4
6
8
10
25
20
15
10
5
56 k
68 k
82 k
100 k
120 k
150 k
180 k
R = 270 k
G
V = 6 V
V = V
G2S
G1
DS
120 k
100 k
82 k
68 k
R = 220 k
G
150 k
180 k
56 k
V = 9 V
R = 100 k
DS
G
220 k
200 k
V = V = 9 V
DS
G1
V = 1 V
G2S
6 V
5 V
4 V
3 V
2 V
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V (V)
DS
Drain Current I (mA)
D
Typical Output Characteristics
Drain Current I (mA)
D
Drain Current I (mA)
D
Gate2 to Source Voltage V (V)
G2S
Gate1 Voltage V (V)
G1
Drain Current vs. Gate1 Voltage
Drain Current vs.
Gate2 to Source Voltage
BB402M
5
20
16
12
8
4
0
2
4
6
8
10
20
16
12
8
4
0
2
4
6
8
10
V = 1 V
G2S
V = 9 V
R = 120 k
DS
G
4 V
3 V
2 V
V = 9 V
R = 150 k
DS
G
25
20
15
10
5
0
2
4
6
8
10
25
20
15
10
5
0
2
4
6
8
10
V = 9 V
R = 100 k
f = 1 kHz
DS
G
V = 1 V
G2S
2 V
4 V
3 V
V = 1 V
G2S
V = 9 V
R = 120 k
f = 1 kHz
DS
G
2 V
5 V
6 V
V = 1 V
G2S
2 V
4 V
3 V
5 V
6 V
3 V
5 V
6 V
4 V
5 V
6 V
Drain Current I (mA)
D
Forward Transfer Admittance |y | (mS)
fs
Gate1 Voltage V (V)
G1
Gate1 Voltage V (V)
G1
Drain Current vs. Gate1 Voltege
Drain Current I (mA)
D
Gate1 Voltage V (V)
G1
Drain Current vs. Gate1 Voltege
Forward Transfer Admittance
vs. Gate1 Voltage
Gate1 Voltage V (V)
G1
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y | (mS)
fs
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