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Электронный компонент: BB403M

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BB403M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-699A (Z)
2nd. Edition
Nov. 1998
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R (SOT-143 var.)
Outline
MPAK-4R
2
1
4
3
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is "CX".
2. BB403M is individual type number of HITACHI BBFET.
BB403M
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
7
V
Gate1 to source voltage
V
G1S
0/ +7
V
Gate2 to source voltage
V
G2S
0/ +7
V
Drain current
I
D
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
7
--
--
V
I
D
= 200
A
V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+7
--
--
V
I
G1
= +10
A
V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+7
--
--
V
I
G2
= +10
A
V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
--
--
+100
nA
V
G1S
= +5V
V
G2S
= V
DS
= 0
Gate2 to source cutoff current
I
G2SS
--
--
+100
nA
V
G2S
= +5V
V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage
V
G1S(off)
0.3
0.6
0.9
V
V
DS
= 5V, V
G2S
= 4V
I
D
= 100
A
Gate2 to source cutoff voltage
V
G2S(off)
0.5
0.8
1.1
V
V
DS
= 5V, V
G1S
= 5V
I
D
= 100
A
Drain current
I
D(op)
9
14
20
mA
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 470k
Forward transfer admittance
|y
fs
|
35
42
50
mS
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V
R
G
= 470k
, f = 1kHz
Input capacitance
c
iss
2.6
3.3
4.0
pF
V
DS
= 5V, V
G1
= 5V
Output capacitance
c
oss
1.7
2.1
2.5
pF
V
G2S
=4V, R
G
= 470k
Reverse transfer capacitance
c
rss
--
0.025
0.05
pF
f = 1MHz
Power gain
PG1
28
32
--
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
Noise figure
NF1
--
1.0
1.6
dB
f = 200MHz
Power gain
PG2
12
16.5
--
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
Noise figure
NF2
--
2.85
3.7
dB
f = 900MHz
BB403M
3
Main Characteristics
Power Gain, Noise Figure Test Circuit
Gate 1
Source
Drain
Gate 2
R
G
A
I
D
V
G2
V
G1
V
G2
Input(50
)
1000p
36p
1000p
L1
V = V
D G1
R
G
BBFET
RFC
Output(50
)
L2
1000p
10p max
1000p
1000p
47k
1SV70
1000p
1000p
1000p
47k
47k
470k
V
T
V
T
Unit Resistance (
)
Capacitance (F)
1SV70
L1 :
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
BB403M
4
900MHz Power Gain, Noise Test Circuit
Input
Output
C2
C1
L1
L2
L3
L4
S
G1
G2
R1
R2
C3
R3
RFC
C6
C5
C4
D
VG2
VG1
VD
C1, C2
C3
C4 to C6
R1
R2
R3
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
470 k
47 k
4.7 k
:
:
:
:
:
:
26
3
3
L2:
18
10
10
L4:
29
7
7
L3:
25
10
8
10
L1:
(
1mm Copper wire)
Unit : mm
RFC :
1mm Copper wire with enamel 4turns inside dia 6mm
BB403M
5
200
150
100
50
0
50
100
150
200
0
1
2
3
4
5
25
20
15
10
5
R = 180 k
G
V = 4 V
V = V
G2S
G1
DS
220 k
270 k
330 k
390 k
470 k
560 k
680 k
2.2 M
1.5 M
1 M
820 k
25
20
15
10
5
0
1
2
3
4
5
25
20
15
10
5
0
4.0
8.0
1.2
1.6
2.0
V = 5 V
DS
1.4 V
V = 4 V
G2S
1.3 V
1.2 V
1.1 V
1.0 V
G2S
V = 1 V
1.5 V
2 V
2.5 V
4 V
3 V
3.5 V
1.5 V
V = 0.9 V
G1S
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (
C)
Maximum Channel Power
Dissipation Curve
Drain Current I (mA)
D
Typical Output Characteristics
Drain to Source Voltage V (V)
DS
Drain Current vs.
Gate1 to Source Voltage
Drain Current vs.
Drain to Source Voltage
Drain Current I (mA)
D
Drain Current I (mA)
D
Drain to Source Voltage V (V)
DS
Gate1 to Source Voltage V (V)
G1S