BB502C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-810B(Z)
3rd. Edition
Jun. 1999
Features
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.6 dB typ. at f = 900 MHz
High gain; PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
Note:
1.
Marking is "BS".
2.
BB502C is individual type number of HITACHI BBFET.
BB502C
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6
V
Gate1 to source voltage
V
G1S
+6
-
0
V
Gate2 to source voltage
V
G2S
+6
-
0
V
Drain current
I
D
20
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
--
--
V
I
D
= 200
A
V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
--
--
V
I
G1
= +10
A
V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
--
--
V
I
G2
= +10
A
V
G1S
= V
DS
= 0
Gate1 to source cutoff current I
G1SS
--
--
+100
nA
V
G1S
= +5V
V
G2S
= V
DS
= 0
Gate2 to source cutoff current I
G2SS
--
--
+100
nA
V
G2S
= +5V
V
G1S
= V
DS
= 0
Gate1 to source cutoff voltage V
G1S(off)
0.5
0.7
1.0
V
V
DS
= 5V, V
G2S
= 4V
I
D
= 100
A
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
V
DS
= 5V, V
G1S
= 5V
I
D
= 100
A
Drain current
I
D(op)
8
11
14
mA
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 180k
Forward transfer admittance
|y
fs
|
20
25
30
mS
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V
R
G
= 180k
, f = 1kHz
Input capacitance
c
iss
1.4
1.7
2.0
pF
V
DS
= 5V, V
G1
= 5V
Output capacitance
c
oss
0.7
1.1
1.5
pF
V
G2S
=4V, R
G
= 180k
Reverse transfer capacitance c
rss
--
0.02
0.05
pF
f = 1MHz
Power gain
PG
17
22
--
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 180k
Noise figure
NF
--
1.6
2.2
dB
f = 900MHz
BB502C
3
Main Characteristics
Gate 1
Source
Drain
Gate 2
R
G
A
I
D
V
G2
V
G1
Output
Input
V = 4 to 0.3 V
AGC
V = 5 V
DS
R
G
V = 5 V
GG
BBFET
RFC
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
Application Circuit
BB502C
4
900MHz Power Gain, Noise Test Circuit
C1, C2
C3
C4 to C6
R1
R2
R3
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 k
47 k
4.7 k
:
:
:
:
:
:
26
3
3
L2:
18
10
10
L4:
29
7
7
L3:
(
1mm Copper wire)
Unit: mm
RFC:
1mm Copper wire with enamel 4turns inside dia 6mm
21
10
8
L1:
10
Input (
50
)
Output (
50
)
C2
C1
L1
L2
L3
L4
S
G1
G2
R1
R2
C3
R3
RFC
C6
C5
C4
D
VG2
VG1
VD
BB502C
5
200
150
100
50
0
50
100
150
200
0
1
2
3
4
5
20
16
12
8
4
V = 4 V
V = V
G2S
G1
DS
20
16
12
8
4
0
1
2
3
4
5
20
16
12
8
4
0
1
2
3
4
5
V = 5 V
R = 120 k
DS
G
V = 5 V
R = 180 k
DS
G
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (C)
Maximum Channel Power
Dissipation Curve
Drain Current I (mA)
D
Typical Output Characteristics
Drain to Source Voltage V (V)
DS
Drain Current vs. Gate1 Voltage
Gate1 Voltage V (V)
G1
Drain Current I (mA)
D
Drain Current vs. Gate1 Voltage
Gate1 Voltage V (V)
G1
Drain Current I (mA)
D
R = 120 k
330 k
270 k
180 k
220 k
150 k
G
2 V
V = 1 V
G2S
4 V
3 V
V = 1 V
G2S
3 V
4 V
2 V
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