2SJ546
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
15
A
Drain peak current
I
D(pulse)
Note1
60
A
Body-drain diode reverse drain current I
DR
15
A
Avalanche current
I
AP
Note3
15
A
Avalanche energy
E
AR
Note3
19
mJ
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
3. Value at Tch = 25
C, Rg
50
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 60 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
R
DS(on)
--
0.075
0.095
I
D
= 8A, V
GS
= 10V
Note4
resistance
R
DS(on)
--
0.105
0.155
I
D
= 8A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
6.5
11
--
S
I
D
= 8A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
850
--
pF
V
DS
= 10V
Output capacitance
Coss
--
420
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
110
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
12
--
ns
V
GS
= 10V, I
D
= 8A
Rise time
t
r
--
75
--
ns
R
L
= 3.75
Turn-off delay time
t
d(off)
--
125
--
ns
Fall time
t
f
--
75
--
ns
Bodydrain diode forward voltage V
DF
--
1.1
--
V
I
F
= 15A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
70
--
ns
I
F
= 15A, V
GS
= 0
diF/ dt =50A/
s
Note:
4. Pulse test
2SJ546
5
0
10
20
30
40
50
10000
1000
3000
300
10
30
100
0
20
40
60
80
0
0
4
8
12
16
8
16
24
32
40
20
1000
200
500
100
20
10
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
100
V = 10 V
25 V
50 V
DD
I = 15 A
D
V
GS
V
DS
V = 50 V
25 V
10 V
DD
0.1 0.2
1
2
10 20
5
0.5
V = 10 V, V = 30 V
PW = 5 s, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
500
200
100
20
50
10
5
0.1
0.3
3
1
10
di / dt = 50 A / s
V = 0, Ta = 25 C
GS
20
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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