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Электронный компонент: HA12232FP

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HA12232FP
Audio Signal Pre-Amp. for Car Deck
ADE-207-328 (Z)
Target Specifications
1st Edition
Sep. 2000
Description
HA12232FP is audio signal pre-amp. LSI providing PB equalizer op-amp. in one chip.
Function
PB equalizer
2 channel
Vref buffer
1 channel
Features
Built-in referential voltage (VREF) for PB equalizer decreases external components.
This IC is low noise.
This IC is strong for a cellular phone noise.
Operating Voltage Range
Product
Min
Max
Unit
HA12232FP
6.5
15
V
Note:
This IC is designed to operate on single supply.
HA12232FP
Rev.1, Sep. 2000, page 2 of 14
Pin Description, Equivalent Circuit (V
CC
= 9 V single supply, Ta = 25
C, No Signal,
The value in the table shows typical value.)
Pin No.
Pin Name
Note
Equivalent Circuit
Description
7
RIP
V = V
CC
/2
GND
V
CC
V
Ripple filter
1
VREF
V = V
CC
/2
V
CC
GND
V 1
Reference output
10
EQOUT(L)
V = V
CC
/2
V
CC
GND
V
Equalizer output
5
EQOUT(R)
2
PBIN(R)
PBIN
NFI
PB equalizer input
13
PBIN(L)
3
NFI(R)
V = V
CC
/2
Equalizer output
12
NFI(L)
for time constant
HA12232FP
Rev.1, Sep. 2000, page 3 of 14
Pin Description, Equivalent Circuit (V
CC
= 9 V single supply, Ta = 25
C, No Signal,
The value in the table shows typical value.) (cont.)
Pin No.
Pin Name
Note
Equivalent Circuit
Description
8
V
CC
Power supply
14
GND
GND pin
4
NC
6
9
11
HA12232FP
Rev.1, Sep. 2000, page 4 of 14
Block Diagram
+
-
-
+
+
14
13
12
11
NFI(L)
PBIN(L)
NC
10
NC
GND
NFI(R)
PBIN(R)
NC
NC
VREF
RIP
9
8
1
2
3
4
R2
330k
5
6
7
R5
330k
C1
0.01
R1
180
R3
12k
C3
0.01
R4
12k
C2
1
Unit
EQOUT(R)
EQOUT(L)
V
CC
R:
C: F
R6
180
HA12232FP
Rev.1, Sep. 2000, page 5 of 14
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Rating
Unit
Note
Supply voltage
V
CC
Max
16
V
Power dissipation
Pd
400
mW
Ta
85
C
Operating temperature
Topr
-
40 to +85
C
Storage temperature
Tstg
-
55 to +125
C
Electrical Characteristics (Ta = 25
C, V
CC
= 9 V, Rg = 680
)
Specification
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Remark
Quiescent current
I
Q
No signal
1.5
2.2
3.2
mA
Channel separation
CT RL
Fin = 1kHz, Vin = 6mVrms
50.0
60.0
dB
EQ gain
G
V
1k
Fin = 1kHz, Vin = 0.6mVrms
37.0
40.0
43.0
dB
G
V
10k
Fin = 10kHz, Vin = 0.6mVrms
33.0
36.0
39.0
dB
THD
THD
Fin = 1kHz, Vin = 2.4mVrms
0.1
0.5
%
EQ maximum output
V
OM
Fin = 1kHz, THD = 1%
300
600
mVrms
*1
Noise voltage level
converted in input
VN
Rg = 680
, Din-Audio Filter
0.7
1.5
Vrms
Note:
1. V
CC
= 6.5 V
HA12232FP
Rev.1, Sep. 2000, page 6 of 14
Functional Description
Power Supply Range
HA12232FP is designed to operate on single supply only.
Table 1
Supply Voltage Range
Product
Single Supply
HA12232FP
6.5 V to 15.0 V
Reference Voltage
HA12232FP provides the reference voltage of half the supply voltage that is the signal grounds. As the
peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their
usual value. The block diagram is shown as figure 1.
-
+
1
8 V
CC
7
14
Figure 1 The Block Diagram of Reference Supply Voltage
HA12232FP
Rev.1, Sep. 2000, page 7 of 14
Input Block Diagram and Level Diagram
PB-EQ Amp. Gv = 40 dB, f = 1 kHz
0.6mVrms
(
-
62.2dBs)
60mVrms
(
-
22.2dBs)
PBIN
PB-EQ
Amp.
EQOUT
NFI
Vref
-
+
R2
330k
R3
12k
C1
0.01
R1
180
Figure 2 Input Block Diagram
Cutoff Frequency, Gain of PB-EQ Amp.
G
V
G
0
G
Transfer Function
T = R
2
[w
2
c
1
2
(R
2
+ R
3
) (R
1
+ R
3
) + 1] / R
1
[w
2
c
1
2
(R
2
+ R
3
)
2
+ 1]
Cutoff Frequency
fc = {[
-
b
(b
2
-
4a)
1/2
] / 2a} / 2
a = 2c
1
4
(R
2
+ R
3
)
2
(R
3
+ R
1
)
2
b = [3 (R
2
+ R
3
) (R
3
+ R
1
)
-
(R
2
+ R
3
)
2
-
(R
3
+ R
1
)
2
] c
1
2
Changing the value of each element to one shown in figure 2,
will be as follows.
fc1 = 50 Hz, fc2 = 1300 Hz
PB-EQ Amp. Gain (f = 0,
)
f = 0
T
0
= R
2
/ R
1
G
0
= 65.3 dB
f =
T
= R
2
(R
3
+ R
1
) / R
1
(R
2
+ R
3
)
G
= 36.3 dB
fc1
fc2
f
+ j
R
2
w c
1
2
(R
1
-
R
2
) / R
1
[w
2
c
1
2
(R
2
+ R
3
)
2
+ 1]
Figure 3 Cutoff Frequency of PB-EQ Amp.
HA12232FP
Rev.1, Sep. 2000, page 8 of 14
Test Circuit
+
-
-
+
+
+
14
13
12
11
NFI(L)
EQOUT(L)
PBIN(L)
NC
10
V
CC
NC
GND
NFI(R)
PBIN(R)
NC
NC
VREF
RIP
9
8
1
EQOUT(R)
2
3
4
R2
330k
5
6
7
R5
330k
C1
0.01
R1
180
R7
680
Lch
Rch
R3
12k
Lch
SW2
SW1
Rch
C3
0.01
R4
12k
C2
1
+
C6
100
+
C7
2.2
+
C4
22
R8
680
C5
22
R9
10k
C8
2.2
R10
10k
Notes:
1. Resistor tolerance
1%
2. Capacitor tolerance
1%
3. Unit R:
, C: F
R6
180
+
Lch
SW3
Rch
Distortion
analyzer
DC +9V
SOURCE1
Oscillo
scope
Noise
meter
AC VM2
AUDIO SG
AC VM1
DC VM1
HA12232FP
Rev.1, Sep. 2000, page 9 of 14
Characteristic Curves
Supply Voltage (V)
Quiescent Current vs. Supply Voltage
5
6
14
15
13
12
11
16
10
9
8
7
Quiescent Current I
Q
(mA)
3.0
2.5
1.5
2.0
Frequency (Hz)
Channel Separation vs. Frequency (L
R, R
L)
Channel Separation (dB)
-
40
-
60
-
80
-
100
-
120
-
140
10
100
100k
10k
1k
HA12232FP
Rev.1, Sep. 2000, page 10 of 14
Frequency (Hz)
EQ Amp. Gain vs. Frequency
EQ Gain (dB)
80
50
40
30
20
70
60
V
CC
= 9.0 V
PBIN
EQOUT
10
100k
10k
1k
100
Supply Voltage (V)
Total Harmonic Distortion vs. Supply Voltage
T.H.D. (%)
1.0
0.1
0.01
0.001
PBIN
EQOUT
Vout = 240 mVrms
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
5
6
14
13
12
11
16
15
10
9
8
7
HA12232FP
Rev.1, Sep. 2000, page 11 of 14
Output Level Vout (dB)
Total Harmonic Distortion vs. Output Level
10
20
30
-
10
0
40
T.H.D. (%)
10.0
0.1
1.0
0.01
0.001
Supply Voltage (V)
Signal Handling
Vomax (Vrms)
5.0
4.0
3.0
2.0
1.0
PBIN
EQOUT
V
CC
= 9.0 V
0 dB = 60 mVrms
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
PBIN
EQOUT
T.H.D.
1 %
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
5
6
14
13
12
11
16
15
10
9
8
7
HA12232FP
Rev.1, Sep. 2000, page 12 of 14
Supply Voltage (V)
Noise Voltage Level Converted in Input vs. Supply Voltage
Noise Voltage Level Converted in Input (
Vrms)
5
6
14
13
12
11
16
15
10
9
8
7
1.0
0
0.5
1.5
Rg = 680
Din-Audio Filter
Frequency (Hz)
Ripple Rejection Ratio vs. Frequency
Ripple Rejection Ratio R.R.R. (dB)
20
0
-
20
-
40
-
60
10
100
100k
10k
1k
HA12232FP
Rev.1, Sep. 2000, page 13 of 14
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
FP-14DA
--
Conforms
0.23 g
Unit: mm
*Dimension including the plating thickness
Base material dimension
*0.22 0.05
*0.42 0.08
0.70 0.20
0.12
0.15
0 8
M
0.10 0.10
2.20 Max
5.5
10.06
1.42 Max
14
8
1
7
10.5 Max
+ 0.20
0.30
7.80
1.15
1.27
0.40 0.06
0.20 0.04
HA12232FP
Rev.1, Sep. 2000, page 14 of 14
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright
Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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