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Электронный компонент: HA13155

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HA13155
33 W
4-Channel BTL Power IC
ADE-207-187A (Z)
2nd Edition
Jul. 1999
Description
The HA13155 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 33 W output per channel, with a 13.7 V
power supply and at Max distortion.
Functions
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Features
Requires few external parts
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
Pin to pin with HA13150A/HA13151/HA13152/HA13153
HA13155
2
Block Diagram
2
5 V
5 V
37.5 k
23.5 k
25 k
Q1 ON
BIAS ON
Q2 ON
MUTE ON
10
C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
Notes:
Standby
Power is turned on when a signal of
3.5 V or 0.05 mA is impressed at pin 2.
When pin 2 is open or connected to
GND, standby is turned on (output off).
Muting
Muting is turned off (output on) when
a signal of 3.5 V or 0.2 mA is impressed
at pin 10.
When pin 10 is open or connected to
GND, muting is turned on (output off).
1.
2.
TAB (header of IC) connected to GND.
3.
STBY
2
IN-1
1
11
IN-2
IN-3
13
23
IN-4
MUTE
10
R9
7.5 k
12
22
TAB
C10
10
/10 V
14
18
6
IN V
CC
PV
CC
1
Buffer & Mute-1
Buffer & Mute-2
Buffer & Mute-3
Buffer & Mute-4
Protector
(ASO, Surge, TSD)
Amp-1
Amp-2
Amp-3
Amp-4
V
CC
13.2 V
C9
4400
/16 V
3
4
5
7
8
9
15
16
17
19
20
21
Unit
R:
C: F
C11
0.1
/16 V
PV
CC
2
R1
2.2
C1
0.1
R2
2.2
C2
0.1
R3
2.2
C3
0.1
R4
2.2
C4
0.1
R5
2.2
C5
0.1
R6
2.2
C6
0.1
R7
2.2
C7
0.1
R8
2.2
C8
0.1
HA13155
3
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
Operating supply voltage
V
CC
18
V
Supply voltage when no signal*
1
V
CC
(DC)
26
V
Peak supply voltage*
2
V
CC
(PEAK)
50
V
Output current*
3
I
O
(PEAK)
4
A
Power dissipation*
4
P
T
83
W
Junction temperature
Tj
150
C
Operating temperature
Topr
30 to +85
C
Storage temperature
Tstg
55 to +125
C
Notes: 1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25
C.
The derating carve is as shown in the graph below.
100
50
0
25
50
85
100
150
Ambient temperature Ta (
C)
Power dissipation P
T
(W)
A: When heat sink is infinite (
j-a = 1.5
C/W)
B: When
f (thermal resistance of heat sink) = 3
C/W
(
j-a = 4.5
C/W)
B
83 W
28 W
A
HA13155
4
Electrical Characteristics (V
CC
= 13.2 V, f = 1 kHz, R
L
= 4
, Rg = 600
, Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current
I
Q
1
--
300
--
mA
Vin = 0
Output offset voltage
V
Q
250
0
+250
mV
Gain
G
V
30.5
32
33.5
dB
Gain difference between
channels
G
V
1.0
0
+1.0
dB
Rated output power
Po
--
19
--
W
V
CC
= 13.2 V
THD = 10%, R
L
= 4
Max output power
Pomax
--
33
--
W
V
CC
= 13.7 V, R
L
= 4
Total harmonic distortion
T.H.D.
--
0.02
--
%
Po = 3 W
Output noise voltage
WBN
--
0.15
--
mVrms
Rg = 0
BW = 20 to 20 kHz
Ripple rejection
SVR
--
55
--
dB
Rg = 600
, f = 120 Hz
Channel cross talk
C.T.
--
70
--
dB
Rg = 600
Vout = 0 dBm
Input impedance
Rin
--
25
--
k
Standby current
I
Q
2
--
--
10
A
Standby control voltage
(high)
V
STH
3.5
--
V
CC
V
Standby control voltage
(low)
V
STL
0
--
1.5
V
Muting control voltage
(high)
V
MH
3.5
--
V
CC
V
Muting control voltage
(low)
V
ML
0
--
1.5
V
Muting attenuation
ATTM
--
70
--
dB
Vout = 0 dBm
HA13155
5
Characteristics Curve
8
10
12
14
16
18
20
400
300
200
100
Supply Voltage V
CC
(V)
Quiescent current I
Q
(mA)
0
0
Quiescent current vs. Supply Voltage
8
10
12
14
16
18
20
70
50
20
Supply Voltage V
CC
(V)
Output Power Po, Pomax (W)
0
0
Output Power vs. Supply Voltage
60
40
30
10
Po(THD = 10 %)
Pomax
R
L
= 4
, f = 1 kHz
HA13155
6
Frequency f (Hz)
Total Harmonic Distortion THD (%)
Total Harmonic Distortion vs. Frequency
Output Power Po (W)
Total Harmonic Distortion THD (%)
Total Harmonic Distortion vs. Output Power
20
50
100 200
500
1k
2k
5k
5
10k 20k
2
0.5
1
0.2
0.1
0.01
0.02
0.05
V
CC
= 13.2 V, R
L
= 4
Po = 1.5 W (Ch1Ch4)
Po = 8.0 W (Ch1Ch4)
0.02
0.05 0.1
0.2
0.5
1
2
5
5
10
20
2
0.5
1
0.2
0.1
0.01
0.02
0.05
10 kHz (Ch1Ch4)
1 kHz (Ch1Ch4)
100 Hz (Ch1Ch4)
0.01
V
CC
= 13.2 V, R
L
= 4
, f = 1 kHz
HA13155
7
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (1)
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (2)
20
50
100 200
500
1k
2k
5k
80
10k 20k
70
50
60
40
30
0
10
20
Input Ch1, V
CC
= 13.2 V, Vout = 0 dBm
Ch2
Ch3
Ch4
20
50
100 200
500
1k
2k
5k
80
10k 20k
70
50
60
40
30
0
10
20
Input Ch2, V
CC
= 13.2 V, Vout = 0 dBm
Ch1
Ch3
Ch4
HA13155
8
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (3)
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (4)
20
50
100 200
500
1k
2k
5k
80
10k 20k
70
50
60
40
30
0
10
20
Input Ch3, V
CC
= 13.2 V, Vout = 0 dBm
Ch1
Ch2
Ch4
20
50
100 200
500
1k
2k
5k
80
10k 20k
70
50
60
40
30
0
10
20
Input Ch4, V
CC
= 13.2 V, Vout = 0 dBm
Ch1
Ch2
Ch3
HA13155
9
Supply Voltage Rejection Ratio SVR (dB)
Supply Voltage Rejection Ratio vs. Frequency
Frequency f (Hz)
Wide Band Noise WBN (mV)
Wide Band Noise vs. Signal Source Resistance
Signal Source Resistance Rg (
)
20
50
100 200
500
1k
2k
5k
80
10k 20k
70
50
60
40
30
0
10
20
V
CC
= 13.2 V, RL = 4
, Vripple = 0 dBm, Rg = 620
Ch1
Ch2
Ch3
Ch4
50k
Mute OFF Ch1Ch4
Mute ON Ch1Ch4
20
50
100 200
500
1k
2k
5k
5
10k 20k
2
0.5
1
0.2
0.1
0.01
0.02
0.05
50k
V
CC
= 13.2 V, R
L
= 4
, Vik = 0
HA13155
10
Power Dissipation P
T
(W)
Power Dissipation vs. Output Power
Output Power Po (W)
Frequency f (Hz)
Power Dissipation P
T
(W)
Power Dissipation vs. Frequency
0.02
0.05 0.1
0.2
0.5
1
2
5
50
10
20
20
5
10
2
1
0.1
0.2
0.5
R
L
= 4
, f = 1 kHz, 1ch operation
V
CC
= 16 V (Ch1Ch4)
V
CC
= 13.2 V (Ch1Ch4)
20
50
100 200
500
1k
2k
5k
15
10k 20k
10
5
0
V
CC
= 13.2 V, R
L
= 4
, Po = 10 W, 1ch operation
Ch1Ch4
0.01
HA13155
11
Gain G
V
(dB)
Gain vs. Frequency
Frequency f (Hz)
40
35
30
25
20
15
10
5
0
Ch1Ch4
V
CC
= 13.2 V, R
L
= 4
, V
OUT
= 0 dBm
20
50 100 200 500 1k 2k
5k 10k 20k 50k 100k200k 500k 1M
HA13155
12
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SP-23TE
Conforms
--
8.5 g
Unit: mm
2 R1.84
0.19
4.32
0.05
19.81
30.18
0.25
2.79
10.70
0.12
3.80
0.05
+ 0.05
0.1
1.55
4.50
0.12
17.78
0.25
4.14
0.33
23
1
4.29
5.08
+ 0.06
0.04
0.40
3.80
0.05
17.50
0.13
0.70
+0.09
0.1
1.27
27.94
0.25 M
1.12
HA13155
13
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
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: http:semiconductor.hitachi.com/
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: http://www.hitachi-eu.com/hel/ecg
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: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
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: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
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e 3
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For further information write to: