HA22039
GaAs IC
Low Distortion Mixer for Micro Wave Application
ADE-207-271 (Z)
Preliminary
1st. Edition
August 1999
Features
Suitable for low distortion of Micro Wave Application
Low voltage and low current operation (3V, 7mA typ.)
Low insertion loss (1.0 dB typ. @800MHz)
Small surface mount package (MPAK6)
Outline
MPAK--6
This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
CAUTION
This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
treat them mechanically in the manner which might expose to the Aer. And it should never be thrown
out with general industrial or domestic wastes.
HA22039
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Supply voltage
Vdd
5
V
Maximum current
Idd
60
mA
Power dissipation
Pd
100
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +125
C
Operation temperature
Topr
30 to +85
C
Electrical Characteristics (Ta = 25
C, Vdd = 3V, Idd = 7mA)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Insertion loss
CL
0
1
3
dB
f = 800 MHz, PRF = -10dBm, Plo = 0dBm
Typical Performance (Ta = 25
C, Vdd = 3V, Idd = 7mA)
Item
Symbol
Typ
Unit
Test Conditions
3rd order input intercept point
IP3in
12
dBm
f = 800 MHz, PRF = -10dBm, Plo = 0dBm
Noise Figure (DSB)
NF
7
dB
HA22039
3
Block Diagram
*
0.16
, 5.5T
*
*
Lo in
*
*
100
RF in
0.16
, 7.5T
*
*
Vd
IF out
0.16
, 7.5T
*
*
10k
*1000pF
1
2
3
6
5
4
HA22039
4
Pin Arrangement
Top View
GG : Mark Type
a to d : Year Code (variable)
e to f : Monthly Code (variable)
GG
e f g h
a b c d
1
3
4
6
2
5
Pin No.
Pin name
Function
1
G1
Gate
2
D1
Drain
3
D2
Drain
4
S2
Source
5
S1
Source
6
G2
Gate
HA22039
5
Pattern Layout
Local
IF
RF
Front Side view of Part Layout
GG
Front Side view of PCB Pattern
HA22039
6
Main Characteristics
Insertion loss vs. Input Power
Insertion loss (dB)
8
6
4
2
0
-20
-10
0
10
20
-20
-10
0
10
20
Input Local Power (dBm)
Vdd = 3V
Idd = 7mA
PRF = -10dBm
Ta = 25
C
IP3in (dBm)
20
15
10
5
0
Input Local Power (dBm)
Vdd = 3V
Idd = 7mA
PRF = -10dBm
Ta = 25
C
NF vs. Input Power
Noise Figure (dB)
-20
-10
0
10
20
2
3
4
5
Input Local Power (dBm)
Vdd = 3V
Idd = 7mA
PRF = -10dBm
Ta = 25
C
20
15
10
5
0
Insertion loss vs. Supply Voltage
Insertion loss (dB)
8
6
4
2
0
Supply Voltage (V)
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ta = 25
C
IP3in vs. Input Power
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
HA22039
7
2
3
4
5
2
4
6
10
8
2
4
6
10
8
2
3
4
5
Supply Voltage (V)
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ta = 25
C
IP3in (dBm)
20
15
10
5
0
IP3in vs. Supply Voltage
NF vs. Supply Voltage
Noise Figure (dB)
20
15
10
5
0
Supply Voltage (V)
Insertion loss vs. Operation current
Insertion loss (dB)
8
6
4
2
0
Operation current (mA)
Operation current (mA)
IP3in (dBm)
20
15
10
5
0
IP3in vs. Operation current
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ta = 25
C
Vdd = 3V
PRF = -10dBm
PLo = 0dBm
Ta = 25
C
Vdd = 3V
PRF = -10dBm
PLo = 0dBm
Ta = 25
C
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
HA22039
8
NF vs. Operation current
Noise Figure (dB)
20
15
10
5
0
2
4
6
8
10
Operation current (mA)
-30
0
30
60
90
-30
0
30
60
90
-30
0
30
60
90
Ambient Temparature (
C)
Insertion loss vs. Temparature
Insertion loss (dB)
8
6
4
2
0
Ambient Temparature (
C)
IP3in (dBm)
20
15
10
5
0
IP3in vs. Temparature
Ambient Temparature (
C)
NF vs. Temparature
Noise Figure (dB)
20
15
10
5
0
Vdd = 3V
PRF = -10dBm
PLo = 0dBm
Ta = 25
C
Vdd = 3V
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Vdd = 3V
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Vdd = 3V
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
HA22039
9
-20
-10
0
10
-20
-10
0
10
RF Input Power (dBm)
Insertion loss vs. Input Power
Insertion loss (dB)
8
6
4
2
0
RF Input Power (dBm)
IP3in (dBm)
20
15
10
5
0
IP3in vs. Input Power
Vdd = 3V
Idd = 7mA
PLo = 0dBm
Ta = 25
C
Vdd = 3V
Idd = 7mA
PLo = 0dBm
Ta = 25
C
fRF = 800MHz
fLo = 900MHz
fRF = 800MHz
fLo = 900MHz
HA22039
10
Package Dimentions
Unit: mm
0.16
0 to 0.15
+ 0.1
0.06
0.6
1.6
0.6
0.95
0.95
1.9
2.9
0.2
0.4
0.1
2.8
+ 0.3
0.2
0.3
1.1
+ 0.2
0.1
+ 0.2
0.1
0.3
0.1
0.3
0.1
Hitachi Code
EIAJ
JEDEC
MPAK6
--
--
HA22039
11
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
HA22039
12
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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