HA22040
GaAs MMIC
Down Converter for Micro Wave Application
ADE-207-318(Z)
1st. Edition
December 1999
Features
Suitable for down converter of Micro Wave Application(1.5 GHz)
Low voltage and low current operation (2.7V, 6mA typ.)
High conversion gain (10.5 dB typ. @1489MHz)
Low 3rd-order intercept point (IP3in=-0.5dBm typ, @1489MHz)
Small surface mount package (MPAK-6)
Outline
MPAK6
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
CAUTION
This product ues GaAs. Since dust or fume of As,which is a component of GaAs, is highly poisonous to
human body, please do not treat them mechanically in the manner which might expose to the Aer. And it
should never be thrown out with general industrial or domestic wastes.
HA22040
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Supply voltage
Vdd
5
V
Maximum current
Idd
15
mA
Power dissipation
Pd
100
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +125
C
Operation temperature
Topr
20 to +70
C
Maximum input power
Pin max
+15
dBm
Electrical Characteristics (Ta = 25
C, Vdd = 2.7V)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current
Idd
3.5
6
8.5
mA
No signal
Conversion gain
CG
8.5
10.5
12.5
dB
f=1489MHz, fLo=1619MHz,
PLo=-12dBm, IF=130MHz,
Pin=-30dBm
Noise figure
NF
--
4.5
6
dB
f=1489MHz,fLo=1619MHz,
PLo=-12dBm,IF=130MHz
Typical Performance (Ta = 25
C, Vdd = 2.7V)
Item
Symbol
Typ
Unit
Test Conditions
VSWR (input)
VSWR in
1.5
--
f = 1.489 GHz
3rd order intercept point
IP3in
-0.5
dBm
f = 1.489 GHz, fud =1.490 Ghz,
Pin=-30dBm,fLo=1.619GHz,
PLo=-12dBm
HA22040
3
Pin Arrangement
1
3
4
6
2
GH
Top View
Mark type : GH
Yearly code : a to d
Monthly code : e to h
5
e
f
h
g
d
c
b
a
Yearly code
1999
2000
2001
2002
Mark
a
b
c
d
Year
Monthly code
January
February
March
April
May
June
July
August
September
October
November
December
Mark
e
f
g
h
Month
Pin No.
Pin name
Function
1
IF out
IF output
2
Cs
Bypath capacitor
3
RF in
RF input
4
Vdd
Voltage supply
5
GND
Ground
6
Lo in
Local input
HA22040
4
Block Diagram
IFout
Cs
Vdd
Lo in
1.5pF
3.3nH
RF in
1pF
5.6nH
Vdd
2200pF
20pF
330nH
180nH
2200pF
8pF
2200pF
1
2
3
4
6
5
HA22040
5
Main Characteristics
Output power,3rd Order Inter-
modulation Distortion vs.Input power
Input Power Pin (dBm)
Output Power Pout (dBm)
20
0
-80
-60
-40
-20
-60
-50
-40
-30
-10
-20
0
10
Current Idd (mA)
Current vs. Input Power
-60
-50
-40
-30
-10
-20
0
10
9
8
7
6
5
4
3
Input Power Pin (dBm)
Local Power PLo (dBm)
-30
-25
-20
-15
-5
-10
0
5
Conversion Gain CG (dB)
3rd order Intercept Point(input) IP3in (dBm)
15
10
-10
-5
0
5
Conversion Gain,3rd Order inter-
cept Point vs. Local Power
Local Power PLo (dBm)
-30
-25
-20
-15
-5
-10
0
5
Noise Figure NF (dB)
Current Idd (mA)
9
8
7
6
5
4
3
Noise Figure,Current vs. Local Power
Vdd=2.7V
Ta=+25
C
RF=1489MHz
Lo=1619MHz,-12dBm
Vdd=2.7V
Ta=+25
C
RF=1489MHz
Lo=1619MHz,-12dBm
Vdd=2.7V,Ta=+25
C
RF=1489MHz,-30dBm
Lo=1619MHz
Vdd=2.7V,Ta=+25
C
RF=1489MHz
Lo=1619MHz
Pout
im3
CG
IP3in
Idd
NF
HA22040
6
Conversion Gain,3rd Order Inter-
cept Point vs. Frequency
Frequency RF (MHz)
Conversion Gain CG (dB)
3rd Order Intercept Point(input) IP3in (dBm)
15
10
-5
0
5
1475 1480 1485 1490
1500
1495
1505
Frequency RF (MHz)
1475 1480 1485 1490
1500
1495
1505
Noise Figure NF (dB)
Current Idd (mA)
Noise Figure,Current vs. Frequency
9
8
7
6
5
4
3
VSWRrf
3
2.5
1
1.5
2
Frequency RF (MHz)
1475 1480 1485 1490
1500
1495
1505
VSWR(RF) vs. Frequency
VSWR(Lo) vs. Frequency
VSWRlo
3
2.5
1
1.5
2
Local Frequency Lo (MHz)
1605 1610 1615 1620
1630
1625
1635
Vdd=2.7V,Ta=+25
C
RF=-30dBm
Lo=-12dBm(IF=130MHz)
Vdd=2.7V
Ta=+25
C
Lo=-12dBm(IF=130MHz)
Vdd=2.7V
Ta=+25
C
Lo=1619MHz,-12dBm
Vdd=2.7V
Ta=+25
C
CG
IP3in
Idd
NF
HA22040
7
Conversion Gain, 3rd Order Inter-
cept Point vs. Supply Voltage
Conversion Gain CG (dB)
3rd Order Interceptpoint(input) IP3in (dBm)
15
10
-5
0
5
Supply Voltage Vdd (V)
2.25
2.5
2.75
3
3.5
3.25
Supply Voltage Vdd (V)
2.25
2.5
2.75
3
3.5
3.25
Noise Figure NF (dB)
Current Idd (mA)
Noise Figure, Current vs. Supply Voltage
9
8
7
6
5
4
3
Supply Voltage Vdd (V)
2.25
2.5
2.75
3
3.5
3.25
Supply Voltage Vdd (V)
2.25
2.5
2.75
3
3.5
3.25
VSWRrf
3
2.5
1.5
2
VSWR(RF) vs. Supply Voltage
VSWR(Lo) vs. Supply Voltage
VSWRlo
3
2.5
1
1.5
2
1
Ta=+25
C
RF=1489MHz
Lo=1619MHz,-12dBm
Ta=+25
C
RF=1489MHz,-30dBm
Lo=1619MHz,-12dBm
Ta=+25
C
RF=1489MHz,-30dBm
Lo=1619MHz,-12dBm
Ta=+25
C
Lo=1619MHz
CG
IP3in
Idd
NF
HA22040
8
Conversion Gain, 3rd order Inter-
cept Point vs. Ambient Temperature
Conversion Gain CG (dB)
3rd Order Intercept point(input) IP3in (dBm)
15
10
-5
0
5
Ambient Temperature Ta (
C
)
-25
0
25
75
50
Ambient Temperature Ta (
C
)
-25
0
25
75
50
Noise Figure NF (dB)
Current Idd (mA)
Noise Figure, Current
vs. Ambient Temperature
9
8
7
6
5
4
3
Ambient Temperature Ta (
C
)
-25
0
25
75
50
Ambient Temperature Ta (
C
)
-25
0
25
75
50
VSWRrf
3
2.5
1.5
2
1
VSWR(RF) vs. Ambient Temperature
VSWR(Lo) vs. Ambient Temperature
VSWRlo
3
2.5
1
1.5
2
Vdd=2.7V
RF=1489MHz,-30dBm
Lo=1619MHz,-12dBm
Vdd=2.7V
RF=1489MHz
Lo=1619MHz,-12dBm
Vdd=2.7V
RF=1489MHz
Lo=1619MHz,-12dBm
Vdd=2.7V
Lo=1619MHz
CG
IP3in
Idd
NF
HA22040
9
Package Dimentions
0.15
0 0.1
0.95
0.6
6 0.3
2.9
0.2
1.9
0.2
1.6
2.8
+ 0.2 0.3
+ 0.2 0.1
+ 0.1
0.05
0.95
0.6
+ 0.1
0.05
1.1
0.3
+ 0.2 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-6
--
--
0.014 g
Unit: mm
HA22040
10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
HA22040
11
Hitachi, Ltd.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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For further information write to:
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