HAF1001

Silicon P Channel MOS FET Series

Power Switching / Over Temperature Shutdown Capability

ADE-208-583 A (Z)

2nd Edition

October 1997

Features

This FET has the over temperature shutdown capability sensing to the junction temperature.

This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit

operation to shutdown the gate voltage in case of high junction temperature like applying over power

consumption, over current etc.

Logic level operation (4 to 6 V Gate drive)

High endurance capability against to the short circuit

Builtin the over temperature shutdown circuit

Latch type shutdown operation (Need 0 voltage recovery)

Outline

Gate resistor

Tempe
rature
Sencing
Circuit

Latch
Circuit

Gate
Shut
down
Circuit

1. Gate
2. Drain
3. Source
4. Drain

TO220AB

HAF1001

Absolute Maximum Ratings (Ta = 25

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

Gate to source voltage

GSS+

Gate to source voltage

GSS

Drain current

Drain peak current

D(pulse)

Note1

Body-drain diode reverse drain current I

Channel dissipation

Pch

Note2

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

Note:

1. PW

s, duty cycle

1 %

2. Value at Tc = 25

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

3.5

1.2

Input current

IH1

100

Vi = 8V, V

= 0

(Gate non shut down)

IH2

Vi = 3.5V, V

= 0

Vi = 1.2V, V

= 0

Input current

IH(sd)1

0.8

Vi = 8V, V

= 0

(Gate shut down)

IH(sd)2

0.35

Vi = 3.5V, V

= 0

Shut down temperature

175

Channel temperature

Gate operation voltage

3.5

HAF1001

Electrical Characteristics (Ta = 25

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

= 3.5V, V

= 2V

Drain current

= 1.2V, V

= 2V

Drain to source breakdown
voltage

(BR)DSS

= 10mA, V

= 0

Gate to source breakdown
voltage

(BR)GSS+

= 100

A, V

= 0

Gate to source breakdown
voltage

(BR)GSS

= 100

A, V

= 0

Gate to source leak current

GSS+1

100

= 8V, V

= 0

GSS+2

= 3.5V, V

= 0

GSS+3

= 1.2V, V

= 0

GSS

100

= 2.4V, V

= 0

Input current (shut down)

GS(op)1

0.8

= 8V, V

= 0

GS(op)1

0.35

= 3.5V, V

= 0

Zero gate voltege drain current I

DSS

250

= 50 V, V

= 0

Gate to source cutoff voltage V

GS(off)

1.1

2.25

= 1mA, V

= 10V

Static drain to source on state
resistance

DS(on)

100

130

= 7.5A, V

= 4V

Note3

Static drain to source on state
resistance

DS(on)

= 7.5A

= 10V

Note3

Forward transfer admittance

= 7.5A, V

= 10V

Note3

Output capacitance

Coss

610

= 10V , V

= 0

f = 1 MHz

Turn-on delay time

d(on)

7.5

= 7.5A, V

= 5V

Rise time

= 4

Turn-off delay time

d(off)

Fall time

Bodydrain diode forward

voltage

1.0

= 15A, V

= 0

Bodydrain diode reverse

recovery time

200

= 15A, V

= 0

diF/ dt =50A/

Over load shut down

os1

3.7

= 5V, V

= 12V

operation time

Note4

os2

= 5V, V

= 24V

Note:

3. Pulse test

4. Including the junction temperature rise of the over loaded condition.

HAF1001

Main Characteristics

100

150

200

500

100

200

0.5

0.3

0.5 1

10 20

50 100

10 V

V = 3 V

3.5 V

Tc = 25 °C

25 °C

75 °C

20 µs

100 µs

1 ms

PW = 10 ms

DC Operation (Tc = 25 °C)

Ta = 25 °C

Operation in this area
is limited by R

DS(on)

Thermal shut down
Operation area

8 V

6 V

5 V

4 V

V = 10 V
Pulse Test

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Pulse Test

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

HAF1001

2.0

1.6

1.2

0.8

0.4

0.5

0.1 0.2

0.5 1

5 10 20

0.2

0.1

0.02

0.05

0.01

0.20

0.16

0.12

0.08

0.04

120

160

5 A

I = 10 A

2 A

V = 4 V

10 V

I = 10 A

2, 5 A

5 A

2 A

10 A

0.1 0.2

0.5 1

5 10 20

0.5

Tc = 25 °C

25 °C

75 °C

V = 10 V
Pulse Test

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Pulse Test

Drain Current I (A)

Drain to Source On State Resistance

R ( )

DS(on)

Static Drain to Source State Resistance

vs. Drain Current

Pulse Test

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

Forward Transfer Admittance |yfs| (S)

Drain Current I (A)

Forward Transfer Admittance vs.

Drain Current

V = 4 V

10 V

HAF1001

0.4

0.8

1.2

1.6

2.0

V = 5 V

0 V

10000

1000

100

500

0.1 0.2

0.5 1

5 10 20

200

100

di / dt = 50 A / µs
V = 0, Ta = 25 °C

0.1 0.2

0.5 1

5 10 20

0.5

100

V = 5 V, V = 30 V
PW = 300 µs, duty < 1 %

t f

d(on)

d(off)

V = 0
f = 1 MHz

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

BodyDrain Diode Reverse

Recovery Time

Drain Current I (A)

Switching Time t (µs)

Switching Characteristics

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Souece to Drain Voltage

Pulse Test

Capacitance Coss (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.
Drain to Source Voltage

HAF1001

0.0001

200

180

160

140

120

100

I = 5 A

0.001

0.01

0.1

9 V

V = 36 V

24 V

12 V

Gate to Source Voltage V (V)

Gate to Source Voltage vs.

Shutdown Time of LoadShort Test

Pw (S)

Shutdown Case Temperature Tc (°C)

Shutdown Case Temperature vs.

Gate to Source Voltage

Gate to Source Voltage V (V)

0.3

0.1

0.03

0.01

10 µ

100 µ

1 m

10 m

100 m

D =

ch c(t) = s (t) · ch c
ch c = 2.50 °C/W, Tc = 25 °C

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

Normalized Transient Thermal Impedance vs. Pulse Width

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533

URL

NorthAmerica

: http:semiconductor.hitachi.com/

Europe

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

Asia (Taiwan)

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong)

: http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223

For further information write to:

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: HAF1001

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: HAF1001