HAF2005
Silicon N Channel MOS FET Series
Power Switching
ADE-208-688 (Z)
Target specification 1st. Edition
Nov. 1998
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has
the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Builtin the over temperature shutdown circuit
Latch type shutdown operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut
down
Circuit
D
S
G
1. Gate
2. Drain
3. Source
TO220FM
1
2
3
HAF2005
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
(25)
--
--
A
V
GS
= 3.5V, V
DS
= 2V
Drain current
I
D2
--
--
10
mA
V
GS
= 1.2V, V
DS
= 2V
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
(16)
--
--
V
I
G
= (300
A), V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
(2.5)
--
--
V
I
G
= (100
A), V
DS
= 0
Gate to source leak current
I
GSS1
--
--
100
A
V
GS
= 8V, V
DS
= 0
I
GSS2
--
--
50
A
V
GS
= 3.5V, V
DS
= 0
I
GSS3
--
--
1
A
V
GS
= 1.2V, V
DS
= 0
I
GSS4
--
--
100
A
V
GS
= 2.4V, V
DS
= 0
Input current (shut down)
I
GS(op)1
--
0.8
--
mA
V
GS
= 8V, V
DS
= 0
I
GS(op)2
--
0.35
--
mA
V
GS
= 3.5V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.25
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
resistance
R
DS(on)
--
25
33
m
I
D
= 20A, V
GS
= 4V
Note3
Static drain to source on state
resistance
R
DS(on)
--
15
20
m
I
D
= 20A, V
GS
= 10V
Note3
Forward transfer admittance
|y
fs
|
25
50
--
S
I
D
= 20A, V
DS
= 10V
Note3
Output capacitance
Coss
--
940
--
pF
V
DS
= 10V , V
GS
= 0
f = 1 MHz
Turn-on delay time
t
d(on)
--
(7.8)
--
s
I
D
= 20A, V
GS
= 5V
Rise time
t
r
--
(64)
--
s
R
L
= 1.5
Turn-off delay time
t
d(off)
--
(19)
--
s
Fall time
t
f
--
(30)
--
s
Bodydrain diode forward
voltage
V
DF
--
(0.85)
--
V
I
F
= 20A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
( )
--
ns
I
F
= 20A, V
GS
= 0
diF/ dt =50A/
s
Over load shut down
t
os1
--
( )
--
ms
V
GS
= 5V, V
DD
= 12V
operation time
Note4
t
os2
--
( )
--
ms
V
GS
= 5V, V
DD
= 24V
Note:
3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
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contact Hitachi's sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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