HAT1021R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-475 D (Z)
5th. Edition
February 1999
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
SOP8
1 2
3
4
5
6
7
8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
D D D
4
1 2
3
5 6
7 8
HAT1021R
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
20
V
Gate to source voltage
V
GSS
10
V
Drain current
I
D
5.5
A
Drain peak current
I
D(pulse)
Note1
44
A
Bodydrain diode reverse drain current I
DR
5.5
A
Channel dissipation
Pch
Note2
2.5
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
20
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
10
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
8 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 20 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.5
--
1.5
V
V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
--
0.048
0.060
I
D
= 3 A, V
GS
= 4 V
Note3
resistance
R
DS(on)
--
0.065
0.085
I
D
= 3 A, V
GS
= 2.5 V
Note3
Forward transfer admittance
|y
fs
|
6
9.5
--
S
I
D
= 3 A, V
DS
= 10 V
Note3
Input capacitance
Ciss
--
1200
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
630
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
200
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
20
--
ns
V
GS
= 4 V, I
D
= 3 A
Rise time
t
r
--
120
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
175
--
ns
Fall time
t
f
--
140
--
ns
Bodydrain diode forward voltage
V
DF
--
0.9
1.4
V
IF = 5.5 A, V
GS
= 0
Note3
Bodydrain diode reverse
recovery time
t
rr
--
65
--
ns
IF = 5.5 A, V
GS
= 0
diF/ dt = 20 A/
s
Note:
3. Pulse test
HAT1021R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
0.1
100
10
1
0.1
0.01
0.3
1
3
10
30
100
30
3
0.3
0.03
10 s
100 s
1 ms
PW = 10 ms
Ta = 25 C
1 shot pulse
50
40
30
20
10
0
10 V
2
4
6
8
10
8 V
50
40
30
20
10
0
1
2
3
4
5
6 V
5 V
V = 1.5 V
GS
4.5 V
4 V
3.5 V
2.5 V
3 V
2 V
Tc = 25 C
25 C
75 C
Channel Dissipation Pch (W)
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
Note 4
DC Operation(PW<10s)
HAT1021R
4
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
D
I = 5 A
1 A
2 A
1
0.2
0.5
0.1
0.02
0.05
0.01
20
0.2
0.5
1
2
5
10
0.20
0.16
0.12
0.08
0.04
40
0
40
80
120
160
0
20
10
2
5
1
50
0.5
0.2
0.5
1
2
5
10 20
4 V
V = 2.5 V
GS
I = 5 A
D
1 A, 2 A, 5 A
1 A, 2 A
4 V
V = 2.5 V
GS
Tc = 25 C
75 C
25 C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
D
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
Pulse Test
HAT1021R
5
0.2
0.5
1
2
5
10
0.1
500
200
100
20
50
10
5
0
4
8
12
-16
20
10000
3000
1000
300
100
30
10
0
10
20
30
40
0
0
2
4
6
8
10
50
8
16
24
32
40
DS
V
GS
V
V = 5 V
10 V
20 V
DD
V = 20 V
10 V
5 V
DD
D
I = 5.5 A
500
200
100
20
50
10
5
0.2
0.5
1
2
5
10
0.1
di / dt = 20 A / s
V = 0, Ta = 25 C
GS
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
t f
r
t
d(off)
t
d(on)
t
V = 4 V, V = 10 V
PW = 3 s, duty < 1 %
GS
DD
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
PDF 
ZIP