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Электронный компонент: HAT1026R

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HAT1026R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-457 H (Z)
9th. Edition
February 1999
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP8
1 2
3
4
5
6
7
8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
D D D
4
1 2
3
5 6
7 8
HAT1026R
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
7
A
Drain peak current
I
D(pulse)
Note1
56
A
Bodydrain diode reverse drain current I
DR
7
A
Channel dissipation
Pch
Note2
2.5
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to + 150
C
Note:
1. PW
10
s, duty cycle
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
V
DS
= 10V,
I
D
= 1mA
Static drain to source on state
R
DS(on)
--
0.028
0.037
I
D
= 4 A, V
GS
= 10 V
Note3
resistance
R
DS(on)
--
0.04
0.065
I
D
= 4 A, V
GS
= 4 V
Note3
Forward transfer admittance
|y
fs
|
8
12
--
S
I
D
= 4 A, V
DS
= 10 V
Note3
Input capacitance
Ciss
--
1700
--
pF
V
DS
= 10V
Output capacitance
Coss
--
1000
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
190
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
60
--
ns
V
GS
= 4 V, I
D
= 4 A
Rise time
t
r
--
330
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
80
--
ns
Fall time
t
f
--
120
--
ns
Bodydrain diode forward voltage
V
DF
--
0.9
1.4
V
IF = 7 A, V
GS
= 0
Note3
Bodydrain diode reverse
recovery time
t
rr
--
70
--
ns
IF = 7 A, V
GS
= 0
diF/ dt = 20A/
s
Note:
3. Pulse test
HAT1026R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
1
3
10 30 100
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
2
4
6
8
10
Tc = 25C
25C
75C
Channel Dissipation Pch (W)
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
DS
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
0.01 0.03
Ta = 25 C
1 shot Pulse
1 ms
PW = 10 ms
10 s 100 s
Operation in
this area is
limited by R
DS(on)
4 V
3.5 V
3 V
8 V
V = 2.5 V
GS
10V
6 V
4.5 V
5 V
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Note 4
DC Operation (PW < 10 s)
HAT1026R
4
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
I = 5 A
D
1 A
2 A
0.5
0.2
0.05
0.1
0.02
0.005
0.01
0.2
0.5
1
2
5
10 20
0.10
0.08
0.06
0.04
0.02
40
0
40
80
120
160
0
50
20
10
2
5
1
0.5
0.2
0.5
1
2
5
10 20
25 C
Tc = 25 C
75 C
I = 1, 2, 5 A
D
1, 2, 5 A
V = 4 V
GS
10 V
V = 4 V
GS
10 V
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Case Temperature Tc (C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Pulse Test
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
DS
V = 10 V
Pulse Test
HAT1026R
5
0.2
0.5
1
2
5
10
0.1
500
200
100
20
50
10
5
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
0
10
20
30
40
0
0
4
8
12
16
16
32
48
64
80
20
10
0.2
0.5
1
2
5
10
0.1
500
200
100
20
50
1000
di/dt = 20 A/s
V = 0, Ta = 25C
GS
V
GS
V
DS
I = 7 A
D
V = 5 V
10 V
25 V
DD
V = 25 V
10 V
5 V
DD
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
50
V = 4 V, V = 10 V
PW = 3 s, duty < 1 %
GS
DD
t f
r
t
d(off)
t
d(on)
t
HAT1026R
6
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
0, 5 V
V = 5 V
GS
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Souece to Drain Voltage
Pulse Test
10
100
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
s (t)
DM
P
PW
T
D =
PW
T
ch f(t) = s (t) ch f
ch f = 83.3 C/W, Ta = 25 C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
HAT1026R
7
Vin Monitor
D.U.T.
Vin
4 V
R
L
V
= 10 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
t
f
Switching Time Test Circuit
Switching Time Waveform
HAT1026R
8
Package Dimensions
Unit: mm
1.75 Max
4.0 Max
M
8
5
1
4
5.0 Max
6.2 Max
1.27
0.15
Hitachi Code
EIAJ
JEDEC
FP8DA
--
MS-012AA
0.25 Max
0.25 Max
1.27 Max
0.51 Max
0.25
0 8
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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5. This product is not designed to be radiation resistant.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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