HAT1036R

Absolute Maximum Ratings (Ta = 25

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

-30

Gate to source voltage

GSS

Drain current

-12

Drain peak current

D(pulse)

Note1

-96

Body-drain diode reverse drain current

-12

Channel dissipation

Pch

Note2

2.5

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

Notes: 1. PW

s, duty cycle

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

10 s

Electrical Characteristics (Ta = 25

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage V

(BR)DSS

-30

= -10 mA, V

= 0

Gate to source leak current

GSS

0.1

20 V, V

= 0

Zero gate voltege drain current

DSS

-1

= -30 V, V

= 0

Gate to source cutoff voltage

GS(off)

-1.0

-2.5

= -10 V,

= -1 mA

Static drain to source on state

DS(on)

= -6 A, V

= -10 V

Note1

resistance

DS(on)

= -6 A, V

= -4 V

Note1

Forward transfer admittance

= -6 A, V

= -10 V

Note1

Input capacitance

Ciss

4200

= -10 V

Output capacitance

Coss

870

= 0

Reverse transfer capacitance

Crss

360

f = 1 MHz

Total gate charge

= -10 V

Gate to source charge

Qgs

= -10 V

Gate to drain charge

Qgd

= -12 A

Turn-on delay time

d(on)

120

= -4 V, I

= -6 A

Rise time

350

-10 V

Turn-off delay time

d(off)

100

Fall time

120

Bodydrain diode forward voltage

-0.85

-1.11

= -12 A, V

= 0

Note1

Bodydrain diode reverse
recovery time

= -12 A, V

= 0

diF/ dt = 20 A/

Note:

1. Pulse test

HAT1036R

Main Characteristics

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

-50

-40

-30

-20

-10

-2

-4

-6

-8

-10

-50

-40

-30

-20

-10

-1

-2

-3

-4

-5

Tc = 75°C

25°C

4.0

3.0

2.0

1.0

100

150

200

-100

-10

-1

-0.1

-0.01

-0.1

-0.3

-1

-3

-10

-30

-100

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

V = -10 V
Pulse Test

-500

Ta = 25 °C
1 shot Pulse

PW = 10 ms

10 µs

100 µs

Operation in
this area is
limited by R

DS(on)

Note 4

DC Operation (PW < 10 s)

1 ms

V = -3 V

-10V

-4 V

-5 V

Pulse Test

-3.5 V

HAT1036R

Gate to Source Voltage V (V)

Drain to Source Voltage V (V)

DS(on)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current I (A)

Drain to Source On State Resistance

R (m )

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |yfs| (S)

Drain Current I (A)

Forward Transfer Admittance vs.

Drain Current

-0.5

-0.4

-0.3

-0.2

-0.1

-4

-8

-12

-16

-20

-0.5

-2

-5

-20 -50

120

160

Pulse Test

I = -10 A

-2 A

-5 A

-0.1

-1

-10

-100

-0.2

100

V = -4 V

-10 V

Pulse Test

R (m )

DS(on)

I = -2 A, -5 A, -10 A

-2 A, -5 A, -10 A

V = -4 V

-10 V

Pulse Test

-3

-30

-0.1

-1

-10

-100

-0.3

100

0.3

0.1

Tc = 25 °C

V = -10 V
Pulse Test

75 °C

25 °C

HAT1036R

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

BodyDrain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.
Drain to Source Voltage

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

-0.2

-0.5

-1

-2

-5

-10

-20

100

-10

-20

-30

-40

-50

10000

3000

1000

300

100

Ciss

Coss

Crss

V = 0
f = 1 MHz

1000

200

500

100

-0.1

di/dt = 20 A/µs
V = 0, Ta = 25°C

-0.2

-0.5

-1

-2

-5

-10

-20

-0.1

V = -4 V, V = -10 V
RG = 50 , duty < 1 %

t f

d(off)

d(on)

120

160

200

V = 5 V

10 V
25 V

I = 12 A

V = 25 V

10 V

5 V

Gate Charge Qg (nc)

Dynamic Input Characteristics

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

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For further information write to:

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