HAT2016R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-438 H (Z)
9th. Edition
June 1997
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP8
1 2
3
4
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT2016R
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
6.5
A
Drain peak current
I
D(pulse)
Note1
52
A
Body-drain diode reverse drain current
I
DR
6.5
A
Channel dissipation
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
HAT2016R
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
V
DS
= 10V,
I
D
= 1mA
Static drain to source on state
R
DS(on)
--
0.03
0.045
I
D
= 4A, V
GS
= 10V
Note4
resistance
R
DS(on)
--
0.05
0.08
I
D
= 4A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
5
8
--
S
I
D
= 4A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
560
--
pF
V
DS
= 10V
Output capacitance
Coss
--
380
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
170
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
30
--
ns
V
GS
= 4V, I
D
= 4A
Rise time
t
r
--
270
--
ns
V
DD
10V
Turn-off delay time
t
d(off)
--
40
--
ns
Fall time
t
f
--
65
--
ns
Bodydrain diode forward
voltage
V
DF
--
0.9
1.4
V
IF = 6.5A, V
GS
= 0
Note4
Bodydrain diode reverse
recovery time
t
rr
--
45
--
ns
IF = 6.5A, V
GS
= 0
diF/ dt =20A/
s
Note:
4. Pulse test
HAT2016R
4
Main Characteristics
Channel Dissipation Pch (W)
Ambient Temperature Ta (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
10
s
100
s
1 ms
PW = 10 ms
20
16
12
8
4
0
2
4
6
8
10
10 V
6 V
3 V
4.5 V
3.5 V
V = 2.5 V
GS
4 V
5 V
20
16
12
8
4
0
1
2
3
4
5
Tc = 25
C
75
C
25
C
2 Drive Operation
1 Drive Operation
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5
DC Operation (PW < 10 s)
Ta = 25
C
1 shot Pulse
1 Drive Operation
HAT2016R
5
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
2 A
1 A
I = 5 A
D
0.2
0.5
1
2
5
10
20
0.5
0.2
0.1
0.02
0.05
0.01
0.005
10 V
V = 4 V
GS
0.10
0.08
0.06
0.04
0.02
40
0
40
80
120
160
0
I = 1 A, 2 A, 5 A
D
1 A, 2 A, 5 A
10 V
V = 4 V
GS
0.2
0.5
1
2
5
10
20
20
10
2
5
1
0.2
0.5
25
C
Tc = 25
C
75
C
Pulse Test
Pulse Test
Pulse Test
DS
V = 10 V
Pulse Test
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