HAT2038R/HAT2038RJ

Absolute Maximum Ratings (Ta = 25

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

Gate to source voltage

GSS

Drain current

Drain peak current

D(pulse)

Note1

Body-drain diode reverse drain current

Avalanche current

HAT2038R

Note4

HAT2038RJ

Avalanche energy

HAT2038R

Note4

HAT2038RJ

2.14

Channel dissipation

Pch

Note2

Channel dissipation

Pch

Note3

Channel temperature

Tch

150

Storage temperature

Tstg

55 to + 150

Note:

1. PW

s, duty cycle

1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

10s

4. Value at Tch=25

C, Rg

HAT2038R/HAT2038RJ

Electrical Characteristics (Ta = 25

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

(BR)DSS

= 10 mA, V

= 0

Gate to source breakdown voltage

(BR)GSS

100

A, V

= 0

Gate to source leak current

GSS

16 V, V

= 0

Zero gate voltage

HAT2038R

DSS

= 60 V, V

= 0

drain current

HAT2038RJ

DSS

0.1

Zero gate voltage

HAT2038R

DSS

= 48 V, V

= 0

drain current

HAT2038RJ

DSS

Ta = 125

Gate to source cutoff voltage

GS(off)

1.2

2.2

= 10 V,

= 1 mA

Static drain to source on state

DS(on)

0.043

0.058

= 3 A, V

= 10 V

Note5

resistance

DS(on)

0.056

0.084

= 3 A, V

= 4 V

Note5

Forward transfer admittance

= 3 A, V

= 10 V

Note5

Input capacitance

Ciss

520

= 10 V

Output capacitance

Coss

270

= 0

Reverse transfer capacitance

Crss

100

f = 1MHz

Turn-on delay time

d(on)

=10 V, I

= 3 A

Rise time

30 V

Turn-off delay time

d(off)

110

Fall time

Bodydrain diode forward voltage

0.84

1.1

IF = 5 A, V

= 0

Note5

Bodydrain diode reverse
recovery time

IF = 5 A, V

= 0

diF/ dt = 50 A/

Note:

5. Pulse test

HAT2038R/HAT2038RJ

Main Characteristics

4.0

3.0

2.0

1.0

100

150

200

100

0.3

0.1

0.3

100

0.03

0.01

0.1

10 µs

1 ms

PW = 10 ms (1shot)

Ta = 25 °C
1 shot pulse

100 µs

3.5 V

4 V

10 V

3 V

V = 2 V

2.5 V

Tc = 75°C

25°C

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)

Pulse Test

V = 10 V
Pulse Test

2 Drive Operation

1 Drive Operation

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

Note 5

DC Operation (PW < 10 s)

HAT2038R/HAT2038RJ

0.5

0.4

0.3

0.2

0.1

100

0.1

0.3

0.20

0.16

0.12

0.08

0.04

120

160

0.1

0.2

0.5

2 A

1 A

1.0

0.2

0.5

0.1

0.02

0.01

0.05

V = 4 V

I = 5 A

V = 4 V

10 V

1, 2 A

1, 2, 5 A

0.5

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

Drain to Source On State Resistance

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

Forward Transfer Admittance |y | (S)

Forward Transfer Admittance vs.

Drain Current

Pulse Test

V = 10 V
Pulse Test

Pulse Test

I = 5 A

10 V

25 °C

Tc = 25 °C

75 °C

HAT2038R/HAT2038RJ

0.1

0.5

0.2

1000

200

500

100

1000

300

100

0.1

0.2

V = 10 V

25 V
50 V

V = 50 V

25 V
10 V

500

200

100

di / dt = 50 A / µs
V = 0, Ta = 25 °C

2000

V = 0
f = 1 MHz

Ciss

Coss

Crss

I = 5A

0.5

V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %

t f

d(on)

d(off)

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

BodyDrain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Dynamic Input Characteristics

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

HAT2038R/HAT2038RJ

0.4

0.8

1.2

1.6

2.0

2.5

2.0

1.5

1.0

0.5

100

125

150

V = 0, 5 V

10 V

5 V

I = 5 A
V = 25 V
L = 100 µH
duty < 0.1 %
Rg > 50

Channel Temperature Tch (°C)

Repetive Avalanche Energy E (mJ)

Maximun Avalanche Energy vs.

Channel Temperature Derating

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

D. U. T

I
Monitor

V
Monitor

Vin
15 V

(BR)DSS

E = · L · I ·

V V

DSS

Avalanche Test Circuit

Avalanche Waveform

Vin Monitor

D.U.T.

Vin
10 V

V
= 30 V

td(on)

Vin

90%

10%

Vout

td(off)

Vout
Monitor

90%

10%

Switching Time Test Circuit

Switching Time Waveform

HAT2038R/HAT2038RJ

10 µ

100 µ

1 m

10 m

100 m

100

1000

10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

D =

ch f(t) = s (t) · ch f
ch f = 125 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

10 µ

100 µ

1 m

10 m

100 m

100

1000

10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

D =

ch f(t) = s (t) · ch f
ch f = 166 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533

URL

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: http:semiconductor.hitachi.com/

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: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong)

: http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

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Tel: <886> (2) 2718-3666
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Electronic components Group
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Germany
Tel: <49> (89) 9 9180-0
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(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223

For further information write to:

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