2SJ244
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
12
V
Gate to source voltage
V
GSS
7
V
Drain current
I
D
2
A
Drain peak current
I
D(pulse)
*
1
4
A
Channel dissipation
Pch*
2
1
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
100
s, duty cycle
10%
2. Value on the alumina ceramic board (12.5
20
0.7 mm)
3. Marking is "JY".
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
12
--
--
V
I
D
= 1 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
7
--
--
V
I
G
=
10
A, V
DS
= 0
Gate to source cutoff current
I
GSS
--
--
5
A
V
GS
=
6 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
1
A
V
DS
= 8 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
I
D
= 100
A, V
DS
= 5 V
Static drain to source on state
resistance
R
DS(on)1
--
0.65
0.9
I
D
= 0.5 A*
1
, V
GS
= 2.5 V
Static drain to source on state
resistance
R
DS(on)2
--
0.5
--
I
D
= 1 A*
1
, V
GS
= 4 V
Forward transfer admittance
|y
fs
|
--
1.8
--
S
I
D
= 1 A*
1
, V
DS
= 5 V
Input capacitance
Ciss
--
130
--
pF
V
DS
= 5 V, V
GS
= 0,
Output capacitance
Coss
--
50
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
260
--
pF
Turn-on delay time
t
(on)
--
365
--
ns
I
D
= 0.2 A*
1
, Vin = 4 V,
Turn-off delay time
t
(off)
--
1450
--
ns
R
L
= 51
Body to drain diode forward
voltage
V
DF
--
--
7
V
I
F
= 4 A*
1
, V
GS
= 0
Note:
1. Pulse test
2SJ244
3
0
0.5
1.0
1.5
2.0
50
100
150
200
Ambient Temperature Ta ( C )
Channel Power Dissipation Pch ( W )
(on the alumina ceramic board)
Maximum Channel Power Dissipation Curve
-0.1
-0.3
-1.0
-3
-10
-30
-100
-0.01
-0.03
-0.1
-0.3
-1.0
-3
-10
Drain to Source Voltage V (V)
DS
Drain Current I ( A )
D
Operation in this Area
is limited by R
DS(on)
PW = 1 ms 1 shot
**on the alumina
ceramic board
DC Operation (Ta=25C)
Maximum Safe Operation Area
0
-2
-4
-6
-8
-10
Drain to Source Voltage V ( V )
DS
-5
-4
-3
-2
-1
Drain Current I ( A )
D
V = -1.5 V
GS
-2
-2.5
-3
-3.5
- 4.5
-5
-4
Pulse Test
Typical Output Characteristics
0
-1
-3
-4
-5
-5
-4
-3
-2
-1
-2
Gate to Source Voltage V ( V )
GS
Drain Current I ( A )
D
Ta = -25 C
+25
+75
V = -5 V
DS
Pulse Test
Typical Forward Transfer Characteristics
2SJ244
4
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
0.2
0.5
1.0
2
5
10
20
Drain Current I (A)
D
V = -5 V
DS
Forward Transfer Admittance |Yfs| ( S )
Pulse Test
Ta = -25 C
+25
+75
Forward Transfer Admittance vs.
Drain Current
-0.1
-0.2
-0.5
-1.0
-2
-5
0.1
0.2
0.5
1.0
2
5
10
Drain Current I (A)
D
Drain to Source On State Resistance R (
)
DS(on)
V = -4 V
GS
-2 V
-3 V
Pulse Test
Drain to Source on State Resistance vs.
Drain Current
-10
0
-1
-3
-4
-5
Drain to Source Saturation Voltage V ( V )
DS(on)
-1.0
-0.8
-0.6
-0.4
-0.2
-2
Gate to Source Voltage V ( V )
GS
I = -1 A
D
-0.5
-0.2
-0.1
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-25
0
25
50
75
100
Drain to Source On State Resistance R (
)
DS(on)
1.0
0.8
0.6
0.4
0.2
Case Temperature Tc ( C )
0
V = -2.5 V
GS
-0.5 A
I = -1 A
D
V = -4 V
GS
I = -1 A
D
-0.5 A
Pulse Test
Drain to Source on State Resistance vs.
Case Temperature
2SJ244
5
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
20
50
100
200
500
1000
2000
Reverse Drain Current I (A)
DR
Reverse Recovery Time t rr ( ns )
di/dt = 10 A/s
PW = 10 s
Reverse Recovery Time vs.
Reverse Drain Current
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
20
50
100
200
500
1000
2000
Drain Current I (A)
D
Switching Time t ( ns )
V = - 4 V, V = - 10 V
PW = 2 s, Duty Cycle = 1 %
GS
DD
td(on)
tf
tr
td(off)
Switching Time vs. Drain Current
0
2
4
6
8
10
Drain to Source Voltage V ( V )
DS
-25
-20
-15
-10
-5
Gate to Source Voltage V ( V )
GS
I = -4 A
D
0
-2
-4
-6
-8
-10
V = -10 V
DD
-5 V
V = -10 V
DD
-5 V
V
GS
V
DS
Gate Charge Qg ( nc )
Pulse Test
Dynamic Input Characteristics
10
20
50
100
200
500
1000
Typical Capacitance C ( pF )
Ciss
Crss
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
Coss
V = 0
GS
f = 1 MHz
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Cautions
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