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Электронный компонент: HD74LV20A

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2SK1836, 2SK1837
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-3PL
1. Gate
2. Drain (Flange)
3. Source
D
G
S
1
2
3
2SK1836, 2SK1837
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
K1836
V
DSS
450
V
K1837
500
Gate to source voltage
V
GSS
30
V
Drain current
I
D
50
A
Drain peak current
I
D(pulse)
*
1
200
A
Body to drain diode reverse drain current
I
DR
50
A
Channel dissipation
Pch*
2
250
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes
1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
2SK1836, 2SK1837
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
K1836
V
(BR)DSS
450
--
--
V
I
D
= 10 mA, V
GS
= 0
breakdown
voltage
K1837
500
--
--
Gate to source breakdown
voltage
V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
25 V, V
DS
= 0
Zero gate
K1836
I
DSS
--
--
250
A
V
DS
= 360 V, V
GS
= 0
voltage drain
current
K1837
V
DS
= 400 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
3.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to
K1836
R
DS(on)
--
0.08
0.10
I
D
= 25 A
source on state
resistance
K1837
--
0.085
0.11
V
GS
= 10 V*
1
Forward transfer admittance
|y
fs
|
22
35
--
S
I
D
= 25 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
8150
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
2100
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
180
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
80
--
ns
I
D
= 25 A
Rise time
t
r
--
250
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
550
--
ns
R
L
= 1.2
Fall time
t
f
--
220
--
ns
Body to drain diode forward
voltage
V
DF
--
1.1
--
V
I
F
= 50 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
620
--
ns
I
F
= 50 A, V
GS
= 0,
di
F
/ dt = 100 A /
s
Note
1. Pulse Test
2SK1836, 2SK1837
4
400
300
200
100
0
Channel Dissipation Pch (W)
50
100
150
200
Case Temperature Tc (C)
Power vs. Temperature
Drain to Source Voltage V (V)
Drain Current I (A)
D
DS
1
3
10
30
100
300
1000
0.1
0.3
1
3
10
30
100
PW = 10 ms (1 shot)
10 s
Operation in this area
is limited by R (on)
DS
1 ms
Ta = 25C
300
1000
DC Operation (Tc = 25C)
100 ms
K1836
K1837
Maximum Safe Operation Area
Drain to Source Voltage V (V)
Drain Current I (A)
0
4
8
12
16
20
20
40
60
80
100
DS
D
8 V
10 V
6 V
5.5 V
5 V
4.5 V
Pulse Test
V = 4 V
GS
Typical Output Characteristics
Gate to Source Voltage V (V)
Drain Current I (A)
GS
D
0
2
4
6
8
10
20
40
60
80
100
Tc = 75C
25C
25C
V = 20 V
Pulse Test
DS
Typical Transfer Characteristics
2SK1836, 2SK1837
5
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage
V (on) (V)
0
4
8
12
16
20
1
3
2
4
5
DS
GS
Pulse Test
50 A
20 A
I = 10 A
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current I (A)
Static DrainSource on State
Resistance R (on) ( )
5
10
20
50
100
200
500
0.01
0.02
0.05
0.1
0.2
0.5
1
D
DS
Pulse Test
V = 10, 15 V
GS
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature Tc (C)
0.5
0.4
0.3
0.2
0.1
0
40
0
40
80
120
160
Static DrainSource on State
Resistance R (on) ( )
DS
Pulse Test
20 A
I = 50 A
D
10 A
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I (A)
Forward Transfer Admittance
|y | (S)
fs
D
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
Tc = 25C
25C
75C
DS
V = 20 V
Pulse Test
Forward Transfer Admittance
vs. Drain Current
2SK1836, 2SK1837
6
Reverse Drain Current I (A)
Reverse Recovery Time trr (ns)
DR
0.5
1
2
5
10
20
50
10
20
50
100
200
500
1000
di / dt = 100 A / s
V = 0, Ta = 25C
GS
Body to Drain Diode Reverse
Recovry Time
Drain to Source Voltage V (V)
Capacitance C (pF)
DS
0
10
20
30
40
50
10
100
1000
10000
V = 0
f = 1 MHz
GS
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Ciss
Crss
Gate Charge g (nc)
Drain to Source Voltage V (V)
Gate to Source Voltage V (V)
DS
GS
Q
0
80
160
240
320
400
100
200
300
400
500
0
4
8
12
16
20
250 V
400 V
250 V
100 V
V
DS
GS
V = 100 V
DD
V = 400 V
DD
V
I = 50 A
D
Dynamic Input Characteristics
V = 10 V,V 30 V
PW = 2 s, duty 1 %
GS
=
.
.
DD
Drain Current I (A)
Switching Time t (ns)
0.5
1
2
5
10
20
50
50
100
200
500
1000
2000
5000
D
td (off)
tf
tr
td (on)
Switching Characteristics
2SK1836, 2SK1837
7
Source to Drain Voltage V (V)
Reverse Drain Current I (A)
0
0.4
0.8
1.2
1.6
2.0
20
60
40
80
100
SD
DR
0, 5 V
Pulse Test
V = 10 V
GS
Reverse Drain Current
vs. Source Drain Voltage
10
100
1 m
10 m
100 m
10
0.01
0.03
0.1
0.3
1
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance s (t)
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25C
0.01
1
ch c(t) = s(t) ch c
ch c = 0.5C / W, Tc = 25C
P
D =
PW
T
PW
T
DM
.
Normalized Transient Thermal Impedance vs. Pulse Width
2SK1836, 2SK1837
8
Vin Monitor
Vout Monitor
R
V 30 V
50
Vin
10 V
D.U.T
DD
L
=
.
.
Switching Time Test Circuit
Vin
10 %
90 %
90 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Waveforms
20.0
0.3
3.3
0.2
1.4
2.2
3.0
1.2
5.45
0.5
5.45
0.5
1.0
3.8
7.4
2.8
0.2
0.6
5.0
0.2
6.0
0.2
26.0
0.3
20.0
0.6
2.5
0.3
+0.25
0.1
+0.25
0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PL
--
--
9.9 g
Unit: mm
2SK1836, 2SK1837
9
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi's permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Strae 3
D-85622 Feldkirchen
Mnchen
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: